参数资料
型号: MTP10N10E
厂商: ON SEMICONDUCTOR
元件分类: JFETs
英文描述: 10 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: CASE 221A-09, 3 PIN
文件页数: 3/8页
文件大小: 107K
代理商: MTP10N10E
MTP10N10E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
TJ, JUNCTION TEMPERATURE (°C)
Figure 2. Gate–Threshold Voltage Variation
With Temperature
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Breakdown Voltage Variation
With Temperature
ID, DRAIN CURRENT (AMPS)
Figure 5. On–Resistance versus Drain Current
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. On–Resistance Variation
With Temperature
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
I D
,DRAIN
CURRENT
(AMPS)
V GS(th)
,GA
TE
THRESHOLD
VOL
TAGE
(NORMALIZED)
V BR(DSS)
,DRAIN-T
O-SOURCE
BREAKDOWN
VOL
TAGE
(NORMALIZED)
20
16
12
8
4
20
16
12
8
4
0
1.2
1.1
1
0.9
0.8
-50
-25
0
25
50
75
100
125
150
20
16
12
8
4
0
10
8
6
4
2
0
2
1.6
1.2
0.8
0.4
0
-50
0
50
100
150
200
0.5
0.4
0.3
0.2
0.1
10
8
6
4
2
0
2
1.6
1.2
0.8
0.4
0
-50
0
50
100
150
TJ = 25°C
8 V
7 V
6 V
5 V
VDS = VGS
ID = 1 mA
VDS = 15 V
TJ = -55°C
+25°C
100°C
VGS = 0 V
ID = 0.25 mA
TJ = 100°C
25°C
-55°C
VGS = 10 V
ID = 5 mA
I D
,DRAIN
CURRENT
(AMPS)
VGS = 10 V
4 V
0.7
VDS = 10 V
200
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