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参数资料
| 型号： | MTP10N10EL |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS |
| 中文描述： | 10 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 2/8页 |
| 文件大小： | 221K |
| 代理商： | MTP10N10EL |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
100
—
—
115
—
—
Vdc
mV/
°
C
μ
Adc
Zero Gate Voltage Drain Current
(VDS = 100 Vdc, VGS = 0 Vdc)
°
(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
IDSS
—
—
—
—
10
100
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
μ
Static Drain–to–Source On–Resistance (VGS = 5.0 Vdc, ID = 5.0 Adc)
Drain–to–Source On–Voltage
(VGS = 5.0 Vdc, ID = 10 Adc)
°
(VGS = 5.0 Vdc, ID = 5.0 Adc, TJ = 125
°
C)
Forward Transconductance (VDS = 8.0 Vdc, ID = 5.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
VGS(th)
1.0
—
1.45
4.0
2.0
—
Vdc
mV/
°
C
Ohm
RDS(on)
VDS(on)
—
0.17
0.22
—
—
1.85
—
2.6
2.3
Vdc
gFS
5.0
7.9
—
mhos
f = 1.0 MHz)
Ciss
Coss
Crss
—
741
1040
pF
(VDS = 25 Vdc, VGS = 0 Vdc,
—
175
250
Reverse Transfer Capacitance
—
18.9
40
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
VGS = 5.0 Vdc, Rg = 9.1
)
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
11
20
ns
Rise Time
(VDD = 50 Vdc, ID = 10 Adc,
—
74
150
Turn–Off Delay Time
—
17
30
Fall Time
—
38
80
Gate Charge
VGS = 5.0 Vdc)
—
9.3
15
nC
(See Figure 8)
(VDS = 80 Vdc, ID = 10 Adc,
—
2.56
—
4.4
—
—
4.6
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 10 Adc, VGS = 0 Vdc)
(IS = 10 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.98
0.898
1.6
—
Vdc
Reverse Recovery Time
dIS/dt = 100 A/
μ
s)
trr
ta
tb
—
124.7
—
ns
(IS = 10 Adc, VGS = 0 Vdc,
—
86
—
—
38.7
—
Reverse Recovery Stored Charge
QRR
—
0.539
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
Ld
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad.)
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%.
(2) Switching characteristics are independent of operating junction temperature.
Ls
—
7.5
—
相关PDF资料 |
PDF描述 |
|---|---|
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| MTP12N10E | TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM |
| MTP1N60E | TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM |
| MTP1N80E | TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP10N10ELG | 功能描述:MOSFET 100V 10A Logic Level N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTP10N10M | 制造商:Motorola Inc 功能描述: |
| MTP10N15 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTP10N25 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTP10N40 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS |
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