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参数资料
| 型号： | MTP1306 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 199K |
| 代理商： | MTP1306 |
MTP1306
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
ONRESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
0.25
0.75
1.25
1.5
2.0
0
75
125
150
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
20
40
80
0
0.001
0.003
0.005
0.007
20
40
90
0.004
0.005
0.006
0.007
0.008
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
50
0
0.5
2.0
10
15
20
25
30
10
100
1000
10,000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
25
0
25
50
75
100
125
150
TJ = 25°C
VDS ≥ 10 V
TJ = 55°C
TJ = 100°C
TJ = 25°C
50
100
0.5
1.0
1.75
25
VGS = 10 V
0
60
160
180
40
140
20
2.0
2.5
3.0
3.5
4.0
4.5
0.006
0.004
0.002
60
100
140
60
80
100
1.5
VGS = 10 V
ID = 38 A
1.0
5.0
TJ = 125°C
100
°C
0.008
0.009
0.010
0.009
5.0 V
4.0 V
120
100
80
125
°C
25
°C
120
25
°C
55
°C
30
50
70
150
120
140
130
110
VGS = 5.0 V
10 V
VGS ≥ 10 V
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