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参数资料
| 型号： | MTP16N25E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-06, 3 PIN |
| 文件页数： | 6/8页 |
| 文件大小： | 110K |
| 代理商： | MTP16N25E |
MTP16N25E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
1.0E05
1.0E04
1.0E02
0.1
1.0
0.01
1.0E03
1.0E01
1.0E+00
1.0E+01
0.05
0.01
SINGLE PULSE
0.02
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
0.1
1000
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
1.0
100
AV
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0
25
50
75
100
125
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
400
200
100
ID = 16 A
300
10
1.0
100
150
t,TIME (s)
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
10 ms
1 ms
dc
100 s
10 s
0.1
D = 0.5
0.2
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