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参数资料
| 型号： | MTP1N100E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 1 A, 1000 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 7/8页 |
| 文件大小： | 203K |
| 代理商： | MTP1N100E |
MTP1N100E
7
Motorola TMOS Power MOSFET Transistor Device Data
PACKAGE DIMENSIONS
CASE 221A–06
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
–––
1.15
–––
Z
–––
0.080
–––
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1
2 3
4
D
SEATING
PLANE
–T–
C
S
T
U
R
J
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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相关代理商/技术参数 |
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