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参数资料
| 型号： | MTP1N60E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 6/8页 |
| 文件大小： | 116K |
| 代理商： | MTP1N60E |
MTP1N60E
http://onsemi.com
6
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
0.1
10
1000
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
10
AV
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.001
25
50
75
100
125
50
ID = 1 A
1
0.1
1
100
150
t, TIME (s)
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
1 ms
10 ms
100 s
dc
40
30
20
0
1
0.1
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10 s
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP1N80E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS |
| MTP1S-E10-C | 功能描述:电缆束带 Mutiple Tie Plate, 1 Bundle, M-S Ties, # RoHS:否 制造商:Phoenix Contact 产品:Cable Tie Mounts 类型:Adhesive 颜色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 长度:19 mm 宽度:19 mm 抗拉强度: |
| MTP1S-E10-C39 | 功能描述:电缆束带 Mutiple Tie Plate, 1 Bundle, M-S Ties, # RoHS:否 制造商:Phoenix Contact 产品:Cable Tie Mounts 类型:Adhesive 颜色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 长度:19 mm 宽度:19 mm 抗拉强度: |
| MTP1S-E6-C | 功能描述:电缆束带 Mutiple Tie Plate, 1 Bundle, M-S Ties, # RoHS:否 制造商:Phoenix Contact 产品:Cable Tie Mounts 类型:Adhesive 颜色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 长度:19 mm 宽度:19 mm 抗拉强度: |
| MTP200 | 制造商:NELLSEMI 制造商全称:Nell Semiconductor Co., Ltd 功能描述:Three-Phase Bridge Rectifier, 200A |
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