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参数资料
| 型号： | MTP27N10E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 代理商： | MTP27N10E |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 1
1
Publication Order Number:
MTP27N10E/D
MTP27N10E
Preferred Device
Power MOSFET
27 Amps, 100 Volts
N–Channel TO–220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain–to–source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
100
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
100
Vdc
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current – Continuous @ 25
°C
Drain Current – Continuous @ 100
°C
Drain Current – Single Pulse (tp ≤ 10 s)
ID
IDM
27
17
95
Adc
Apk
Total Power Dissipation @ 25
°C
Derate above 25
°C
PD
104
0.83
Watts
W/
°C
Operating and Storage Temperature
Range
TJ, Tstg
–55 to
150
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 75 Vdc, VGS = 10 Vdc,
IL = 27 Apk, L = 0.3 mH, RG = 25 )
EAS
109
mJ
Thermal Resistance
– Junction to Case
– Junction to Ambient
R
θJC
R
θJA
1.2
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10
seconds
TL
260
°C
27 AMPERES
100 VOLTS
RDS(on) = 70 m
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MTP27N10E
TO–220AB
50 Units/Rail
TO–220AB
CASE 221A
STYLE 5
1
2
3
4
http://onsemi.com
N–Channel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
MTP27120E
= Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
MTP27N10E
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP2955 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM |
| MTP2955D | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM |
| MTP2955E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM |
| MTP2955V | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTP2955V_L86Z | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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