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参数资料
| 型号： | MTP36N06V |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 32A TO-220AB |
| 产品变化通告： | Product Discontinuation 30/Jun/2004 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 32A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 16A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 50nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1700pF @ 25V |
| 功率 - 最大： | 90W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | MTP36N06VOS |
MTP36N06V
Preferred Device
Power MOSFET
32 Amps, 60 Volts
N ? Channel TO ? 220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
? Avalanche Energy Specified
? I DSS and V DS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
http://onsemi.com
32 AMPERES
60 VOLTS
R DS(on) = 40 m Ω
N ? Channel
D
Rating
Symbol
Value
Unit
Drain ? to ? Source Voltage
Drain ? to ? Gate Voltage (R GS = 1.0 M Ω )
Gate ? to ? Source Voltage
? Continuous
? Non ? repetitive (t p ≤ 10 ms)
V DSS
V DGR
V GS
V GSM
60
60
± 20
± 25
Vdc
Vdc
Vdc
Vpk
G
S
Drain Current ? Continuous @ 25 ° C
Drain Current ? Continuous @ 100 ° C
Drain Current ? Single Pulse (t p ≤ 10 μ s)
Total Power Dissipation @ 25 ° C
Derate above 25 ° C
Operating and Storage Temperature
Range
I D
I D
I DM
P D
T J , T stg
32
22.6
112
90
0.6
? 55 to
175
Adc
Apk
Watts
W/ ° C
° C
4
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
TO ? 220AB
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 Vdc, V GS = 10 Vdc, Peak
I L = 32 Apk, L = 0.1 mH, R G = 25 Ω )
Thermal Resistance ? Junction to Case
Thermal Resistance ? Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from Case for 10
seconds
E AS
R θ JC
R θ JA
T L
205
1.67
62.5
260
mJ
° C/W
° C
1
2
3
CASE 221A
STYLE 5
MTP30N06V
LLYWW
1
Gate
2
Drain
3
Source
MTP30N06V
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
MTP36N06V
Package
TO ? 220AB
Shipping
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
August, 2006 ? Rev. 4
1
Publication Order Number:
MTP36N06V/D
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