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参数资料
| 型号： | MTP3N120E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 1200 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 181K |
| 代理商： | MTP3N120E |
MTP3N120E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
1200
—
1.28
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 1200 Vdc, VGS = 0 Vdc)
(VDS = 1200 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
10
100
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.0
7.1
4.0
—
Vdc
mV/
°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.5 Adc)
RDS(on)
—
4.0
5.0
Ohm
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 3.0 Adc)
(ID = 1.5 Adc, TJ = 125°C)
VDS(on)
—
18.0
15.8
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 1.5 Adc)
gFS
2.5
3.1
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vdc V
0 Vdc
Ciss
—
1200
1700
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
90
250
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
—
23
75
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(V
600 Vd
I
3 0 Ad
td(on)
—
13.6
30
ns
Rise Time
(VDD = 600 Vdc, ID = 3.0 Adc,
VGS =10Vdc
tr
—
12.6
30
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
—
35.8
70
Fall Time
G
)
tf
—
20.7
40
Gate Charge
(V
600 Vd
I
3 0 Ad
QT
—
31
40
nC
(VDS = 600 Vdc, ID = 3.0 Adc,
Q1
—
8.0
—
( DS
, D
,
VGS = 10 Vdc)
Q2
—
11
—
Q3
—
14
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.80
0.65
1.0
—
Vdc
Reverse Recovery Time
(I
3 0 Ad
V
0 Vd
trr
—
394
—
ns
(IS = 3.0 Adc, VGS = 0 Vdc,
ta
—
118
—
( S
,
GS
,
dIS/dt = 100 A/s)
tb
—
276
—
Reverse Recovery Stored Charge
QRR
—
2.11
—
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
3.5
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
7.5
—
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
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PDF描述 |
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| MTP3N60E | 3 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP3N25E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHM |
| MTP3N35 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 3.0 A, 350-400 V |
| MTP3N40 | 制造商:n/a 功能描述:3N40 S8H2A |
| MTP3N50 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS |
| MTP3N50E | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220AB 制造商:UNBRANDED 功能描述:MOSFET, N TO-220 |
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