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参数资料
| 型号： | MTP4N80E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-06, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 110K |
| 代理商： | MTP4N80E |
MTP4N80E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
04
8
12
16
20
7
2
6
10
14
18
3
5 V
6 V
VDS ≥ 10 V
2.0
2.8
3.6
4.4
5.2
2.4
3.2
4.0
4.8
TJ = 55°C
25°C
100°C
TJ = 25°C
VGS = 10 V
15 V
1.8
2.4
2.1
VGS = 0 V
0
200
400
1
100
10000
100
300
600
500
25°C
TJ = 125°C
13
7
0.6
2.2
3.8
4.6
3.0
1.4
5
TJ = 100°C
25°C
55°C
VGS = 10 V
50
0.2
0.6
1.0
1.8
2.2
25
0
25
50
75
100
125
150
VGS = 10 V
ID = 2 A
4 V
5
1
1000
2.3
2.5
2.6
2.2
2.0
1.4
6
2
8
4
I D
,DRAIN
CURRENT
(AMPS)
5.6
24
8
6
1.9
10
800
700
7
3
5
1
6
2
8
4
0
13
7
5
24
8
6
100°C
VGS = 10 V
0
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