型号: | MTP50N05ED1 |
厂商: | MOTOROLA INC |
元件分类: | JFETs |
英文描述: | 50 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
文件页数: | 2/2页 |
文件大小: | 66K |
代理商: | MTP50N05ED1 |
相关PDF资料 |
PDF描述 |
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MTP4N50EAF | 4 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
MTP4N50EW | 4 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
MTP6P20EW | 6 A, 200 V, 1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
MTP7N20C | 7 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
MTP10N25L | 10 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
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MTP50N05EW | 制造商:Motorola Inc 功能描述:50 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
MTP50N06 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM |
MTP50N06EL | 制造商:ON Semiconductor 功能描述: |
MTP50N06V | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
MTP50N06V_L86Z | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |