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| 型号： | MTP75N03HDL |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | OSCILLATORS 100PPM -10+70 3.3V 4 8.000MHZ TS HCMOS 5X7MM 4PAD SMD |
| 中文描述： | 75 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 1/8页 |
| 文件大小： | 235K |
| 代理商： | MTP75N03HDL |
1
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS
E–FET is designed to
withstand high energy in the avalanche and commutation modes.
This new energy efficient design also offers a drain–to–source
diode with a fast recovery time. Designed for low–voltage,
high–speed switching applications in power supplies, converters
and PWM motor controls, and inductive loads. The avalanche
energy capability is specified to eliminate the guesswork in designs
where inductive loads are switched, and to offer additional safety
margin against unexpected voltage transients.
Ultra Low RDS(on), High–Cell Density, HDTMOS
SPICE Parameters Available
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Avalanche Energy Specified
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
25
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage — Continuous
Gate–Source Voltage
— Single Pulse (tp
≤
10 ms)
25
Vdc
±
15
±
20
Vdc
Vpk
Drain Current — Continuous
— Continuous @ 100
°
C
— Single Pulse (tp
≤
10
μ
s)
ID
ID
IDM
75
59
225
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
PD
150
1.0
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 175
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 75 Apk, L = 0.1 mH, RG = 25
)
280
mJ
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θ
JC
R
θ
JA
1.0
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
TL
260
°
C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET and HDTMOS are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
Order this document
by MTP75N03HDL/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
LOGIC LEVEL
75 AMPERES
RDS(on) = 9.0 mOHM
25 VOLTS
Motorola Preferred Device
D
S
G
CASE 221A–06, Style 5
TO–220AB
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