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参数资料
| 型号： | MTSF3N02HDR2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 4000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MICROPAK-8 |
| 文件页数： | 7/12页 |
| 文件大小： | 137K |
| 代理商： | MTSF3N02HDR2 |
MTSF3N02HD
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
I DSS
,LEAKAGE
(nA)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
0
0.4
1.6
2
0
1
3
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
0.04
0.02
Figure 5. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 6. On–Resistance versus Drain Current
and Gate Voltage
1
100
Figure 7. On–Resistance Variation
with Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 8. Drain–to–Source Leakage Current
versus Voltage
VDS ≥ 10 V
TJ = -55°C
25°C
100°C
0.03
4
2
0.01
TJ = 25°C
2
4
6
5
1
1.4
1.6
1.8
2
0.02
0.05
01
2
5
6
10
0
4
12
16
2.3 V
20
0.03
0.04
3
24
8
6
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
34
4.5 V
VGS = 2.7 V
TJ = 25°C
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
-50
0
50
100
150
0
0.5
1.0
1.5
2.0
VGS = 4.5 V
ID = 1.9 A
125
75
25
-25
VGS = 0 V
TJ = 125°C
100°C
1.2
5
6
2.1 V
2.5 V
1.7 V
2.9 V
1.9 V
4.5 V
VGS = 10 V
VGS = 3.8 V
TJ = 25°C
1.2
1
0
1000
0.1
25°C
7
8
0.8
7
8
78
8
1.5 V
0.05
0.06
0.01
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