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参数资料
| 型号： | MTY100N10E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封装： | CASE 340G-02, TO-264, 3 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 207K |
| 代理商： | MTY100N10E |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 4
1
Publication Order Number:
MTY100N10E/D
MTY100N10E
Preferred Device
Power MOSFET
100 Amps, 100 Volts
NChannel TO264
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a draintosource diode with fast recovery
time. Designed for high voltage, high speed switching applications in
power supplies, converters, PWM motor controls, and other inductive
loads. The avalanche energy capability is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
Avalanche Energy Specified
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
100
Vdc
DrainGate Voltage (RGS = 1 MΩ)
VDGR
100
Vdc
GateSource Voltage
Continuous
NonRepetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current Continuous @ TC = 25°C
Drain Current Single Pulse (tp ≤ 10 μs)
ID
IDM
100
300
Adc
Apk
Total Power Dissipation
Derate above 25°C
PD
300
2.38
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 80 Vdc, VGS = 10 Vdc, Peak
IL = 100 Apk, L = 0.1 mH, RG = 25 Ω )
EAS
250
mJ
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
0.42
40
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260
°C
100 AMPERES
100 VOLTS
RDS(on) = 11 mΩ
Device
Package
Shipping
ORDERING INFORMATION
MTY100N10E
TO264
25 Units/Rail
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
LL
= Location Code
Y
= Year
WW
= Work Week
MARKING DIAGRAM
& PIN ASSIGNMENT
D
G
TO264
CASE 340G
Style 1
MTY100N10E
NChannel
S
LLYWW
1
2
3
1
Gate
3
Source
2
Drain
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