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参数资料
| 型号： | MTY55N20E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 55 A, 200 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封装： | CASE 340G-02, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 193K |
| 代理商： | MTY55N20E |
Semiconductor Components Industries, LLC, 2005
February, 2005 Rev. XXX
1
Publication Order Number:
MTY55N20E/D
MTY55N20E
Preferred Device
Power MOSFET
55 Amps, 200 Volts
NChannel TO264
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a draintosource diode with fast recovery
time. Designed for high voltage, high speed switching applications in
power supplies, converters, PWM motor controls, and other inductive
loads. The avalanche energy capability is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
Avalanche Energy Specified
Diode is Characterized for Use in Bridge Circuits
I
DSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
200
Vdc
DrainGate Voltage (RGS = 1 M)
VDGR
200
Vdc
GateSource Voltage
Continuous
NonRepetitive (tp ≤ 10 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current Continuous @ TC = 25°C
Drain Current Single Pulse (tp ≤ 10 s)
ID
IDM
55
165
Adc
Apk
Total Power Dissipation
Derate above 25
°C
PD
300
2.38
Watts
W/
°C
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 80 Vdc, VGS = 10 Vdc, Peak
IL = 110 Apk, L = 0.3 mH, RG = 25 )
EAS
3000
mJ
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
0.42
40
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
55 AMPERES
200 VOLTS
RDS(on) = 28 m
Device
Package
Shipping
ORDERING INFORMATION
MTY55N20E
TO264
25 Units/Rail
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
LL
= Location Code
Y
= Year
WW
= Work Week
MARKING DIAGRAM
& PIN ASSIGNMENT
D
G
TO264
CASE 340G
Style 1
MTY55N20E
NChannel
S
LLYWW
1
2
3
1
Gate
3
Source
2
Drain
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