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参数资料
| 型号： | MUN2134LT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-59, 3 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 125K |
| 代理商： | MUN2134LT1 |
MUN2111T1 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
—
100
nAdc
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
—
500
nAdc
Emitter–Base Cutoff Current
MUN2111T1
(VEB = 6.0 V, IC = 0)
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
IEBO
—
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
Collector–Base Breakdown Voltage (IC = 10 A, IE = 0)
V(BR)CBO
50
—
Vdc
Collector–Emitter Breakdown Voltage (Note1.)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
—
Vdc
ON CHARACTERISTICS (Note 1.)
DC Current Gain
MUN2111T1
(VCE = 10 V, IC = 5.0 mA)
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
hFE
35
60
80
160
3.0
8.0
15
80
60
100
140
250
5.0
15
27
140
130
—
Collector–Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2130T1
(IC = 10 mA, IB = 5.0 mA)
MUN2131T1
(IC = 10 mA, IB = 1.0 mA)
MUN2116T1
MUN2132T1
MUN2134T1
VCE(sat)
—
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
MUN2111T1
MUN2112T1
MUN2114T1
VOL
—
0.2
Vdc
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
MUN2113T1
—
0.2
1. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MUN2134RT1 | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Bias Resistor Transistor |
| MUN2134T1 | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| MUN2134T1G | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| MUN2135T1G | 制造商:ON Semiconductor 功能描述:PNP DIGITAL TRANSISTOR (B - Tape and Reel 制造商:ON Semiconductor 功能描述:PNP DIGITAL TRANSISTOR (B - Cut TR (SOS) 制造商:ON Semiconductor 功能描述:REEL / PNP DIGITAL TRANSISTOR (B |
| MUN2136 | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon |
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