- 您现在的位置：买卖IC网 > PDF目录369936 > MUN5213T1 (MOTOROLA INC) NPN SILICON BIAS RESISTOR TRANSISTORS PDF资料下载
参数资料
| 型号： | MUN5213T1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | NPN SILICON BIAS RESISTOR TRANSISTORS |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-70, 3 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 230K |
| 代理商： | MUN5213T1 |
PIN3
COLLECTOR
(OUTPUT)
PIN2
EMITTER
(GROUND)
PIN1
BASE
(INPUT)
R1
R2
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device
and its external resistor bias network. The BRT (Bias Resistor Transistor)
contains a single transistor with a monolithic bias network consisting of two
resistors; a series base resistor and a base-emitter resistor. The BRT eliminates
these individual components by integrating them into a single device. The use
of a BRT can reduce both system cost and board space. The device is housed
in the SC-70/SOT-323 package which is designed for low power surface mount
applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC-70/SOT-323 package can be soldered using
wave or reflow. The modified gull-winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
MAXIMUM RATINGS
(TA = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
VCEO
IC
PD
50
Vdc
Collector-Emitter Voltage
50
Vdc
Collector Current
Total Power Dissipation @ TA = 25
°
C(1)
Derate above 25
°
C
THERMAL CHARACTERISTICS
100
mAdc
*
150
1.2
mW
mW/
°
C
Thermal Resistance — Junction-to-Ambient (surface mounted)
R
θ
JA
TJ, Tstg
TL
833
°
C/W
°
C
°
C
Sec
Operating and Storage Temperature Range
–65 to +150
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
DEVICE MARKING AND RESISTOR VALUES
260
10
Device
Marking
R1 (K)
R2 (K)
MUN5211T1
MUN5212T1
MUN5213T1
MUN5214T1
MUN5215T1(2)
MUN5216T1(2)
MUN5230T1(2)
MUN5231T1(2)
MUN5232T1(2)
MUN5233T1(2)
MUN5234T1(2)
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MUN5211T1/D
SEMICONDUCTOR TECHNICAL DATA
NPN SILICON
BIAS RESISTOR
TRANSISTORS
Motorola Preferred Devices
CASE 419-02, STYLE 3
SC-70/SOT-323
1
2
3
REV 2
相关PDF资料 |
PDF描述 |
|---|---|
| MUN5214T1 | NPN SILICON BIAS RESISTOR TRANSISTORS |
| MUR10120 | SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS |
| MUR10120E | SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS |
| MUR10150 | SCANSWITCH RECTIFIER 10 AMPERES 1500 VOLTS |
| MUR10150E | SCANSWITCH RECTIFIER 10 AMPERES 1500 VOLTS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MUN5213T1G | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| MUN5213TI | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MUN5214 | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:NPN Silicon Bias Resistor Transistor |
| MUN5214DW | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Surface Mount Dual Bias Resistor Transistor |
| MUN5214DW1T1 | 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT Dual RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。