参数资料
型号: MUR105RLG
厂商: ON Semiconductor
文件页数: 2/7页
文件大小: 115K
描述: DIODE ULTRA FAST 1A 50V DO-41
标准包装: 1
系列: SWITCHMODE™
二极管类型: 标准
电压 - (Vr)(最大): 50V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 875mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 35ns
电流 - 在 Vr 时反向漏电: 2µA @ 50V
安装类型: 通孔
封装/外壳: DO-204AL,DO-41,轴向
供应商设备封装: 轴向
包装: 剪切带 (CT)
其它名称: MUR105RLGOSCT
MUR120 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MUR
Unit
105
110
115
120
130
140
160
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
50
100
150
200
300
400
600
V
Average Rectified Forward Current
(Square Wave Mounting Method #3 Per Note 2)
IF(AV)
1.0 @ TA
= 130
°C
1.0 @ TA
= 120
°C
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave,
single phase, 60 Hz)
IFSM
35
A
Operating Junction Temperature and Storage Temperature
TJ, Tstg
65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t
he
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Maximum Thermal Resistance, Junction?to?Ambient
RJA
Note 2
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(iF
= 1.0 Amp, T
J
= 150
°C)
(iF
= 1.0 Amp, T
J
= 25
°C)
vF
0.710
0.875
1.05
1.25
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TJ
= 150
°C)
(Rated DC Voltage, TJ
= 25
°C)
iR
50
2.0
150
5.0
A
Maximum Reverse Recovery Time
(IF
= 1.0 A, di/dt = 50 A/
s)
(IF
= 0.5 A, i
R
= 1.0 A, I
REC
= 0.25 A)
trr
35
25
75
50
ns
Maximum Forward Recovery Time
(IF
= 1.0 A, di/dt = 100 A/
s, IREC
to 1.0 V)
tfr
25
50
ns
Typical Peak Reverse Recovery Current
(IF
= 1.0 A, di/dt = 50 A/
s)
IRM
0.85
A
1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
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