参数资料
型号: MUR120/54
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC
封装: PLASTIC, DO-15, 2 PIN
文件页数: 2/3页
文件大小: 152K
代理商: MUR120/54
www.vishay.com
2
Document Number 88683
21-Jul-05
MUR120
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Pulse test: tp = 300 s pulse, duty cycle ≤ 2 %
Thermal Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Lead length = 3/8" on P.C. Board with 1.5" x 1.5" copper surface
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
Symbol
MUR120
Unit
Maximum instantaneous
forward voltage (1)
at 1.0 A,
TJ = 25 °C
TJ = 150 °C
VF
0.875
0.710
V
Maximum instantaneous
reverse current at rated DC
blocking voltage (1)
TJ = 25 °C
TJ = 150 °C
IR
2.0
50
A
Maximum reverse recovery
time
at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
25
ns
Maximum reverse recovery
time
at IF = 1.0 A, di/dt = 50 A/s, VR= 30 V,
Irr= 10 % IRM
trr
35
ns
Maximum forward recovery
time
at IF = 1.0 A, di/dt = 100 A/s, Irec to 1.0 V
tfr
25
ns
Parameter
Symbol
MUR120
Unit
Typical Thermal Resistance Junction to Ambient (1)
RθJA
27
°C/W
Figure 1. Forward Current Derating Curve
0
2.0
3.0
0
25
50
75
100
125
150
175
A
verage
Forward
Rectified
Current
(A)
Ambient Temperature (°C)
1.0
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
0
10
20
30
40
50
1
100
10
Peak
Forward
Surge
Current
(A)
Number of Cycles at 60 HZ
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