参数资料
型号: MUR120RL
厂商: ON Semiconductor
文件页数: 3/7页
文件大小: 115K
描述: DIODE ULTRA FAST 1A 200V DO-41
产品变化通告: Product Obsolescence 19/Jun/2009
标准包装: 10
系列: SWITCHMODE™
二极管类型: 标准
电压 - (Vr)(最大): 200V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 875mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 35ns
电流 - 在 Vr 时反向漏电: 2µA @ 200V
安装类型: 通孔
封装/外壳: DO-204AL,DO-41,轴向
供应商设备封装: 轴向
包装: 剪切带 (CT)
其它名称: MUR120RLOSCT
MUR120 Series
http://onsemi.com
3
MUR105, MUR110, MUR115, MUR120
Figure 1. Typical Forward Voltage
vF,
INSTANTANEOUS VOLTAGE (VOLTS)
0.3 0.60.4 0.80.5
0.7 0.9 1.1
3.0
0.01
0.03
0.02
0.2
0.1
10
2.0
0.7
0.3
0.05
0.5
5.0
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
1.3
VR, REVERSE VOLTAGE (VOLTS)
06020 80 20040 100 120
140
160 180
100
0.01
0.001
1.0
10
TJ
= 175
°C
I
R
Figure 2. Typical Reverse Current*
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
0
1.0
2.0
3.0
4.0
5.0
P
F(AV)
0
0.5 1.0 1.5 2.0 2.5
TA, AMBIENT TEMPERATURE (°C)
050100 200
0
2.0
1.0
3.0
5.0
4.0
I
250
Figure 3. Current Derating
(Mounting Method #3 Per Note 1)
Figure 4. Power Dissipation
0
10
30
50
5.0
10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
0.07
1.0
7.0
1.0 1.2
100°C
TJ= 175°C
25°C
0.1
, REVERSE CURRENT ( A)
100°C
25°C
150
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if VR
is sufficiently below
rated VR.
C, CAPACITANCE (pF)
, AVERAGE POWER DISSIPATION (WATTS)
TJ
= 25
°C
i
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
30 40 50
7.0
20
TJ
= 175
°C
RATED VR
RJA
= 50
°C/W
dc
SQUARE WAVE
(CAPACITIVELOAD)
PK
I
20
AV
I
SQUARE WAVE
dc
5.0
10
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