- 您现在的位置：买卖IC网 > PDF目录20014 > MUR140 (ON Semiconductor)DIODE ULTRA FAST 1A 400V DO-41 PDF资料下载
参数资料
| 型号： | MUR140 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 115K |
| 描述： | DIODE ULTRA FAST 1A 400V DO-41 |
| 产品变化通告： | Product Obsolescence 19/Jun/2009 |
| 标准包装： | 1,000 |
| 系列： | SWITCHMODE™ |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 400V |
| 电流 - 平均整流 (Io)： | 1A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.25V @ 1A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 反向恢复时间(trr)： | 75ns |
| 电流 - 在 Vr 时反向漏电： | 5µA @ 400V |
| 安装类型： | 通孔 |
| 封装/外壳： | DO-204AL，DO-41，轴向 |
| 供应商设备封装： | 轴向 |
| 包装： | 散装 |
MUR120 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MUR
Unit
105
110
115
120
130
140
160
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
50
100
150
200
300
400
600
V
Average Rectified Forward Current
(Square Wave Mounting Method #3 Per Note 2)
IF(AV)
1.0 @ TA
= 130
°C
1.0 @ TA
= 120
°C
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave,
single phase, 60 Hz)
IFSM
35
A
Operating Junction Temperature and Storage Temperature
TJ, Tstg
65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t
he
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Maximum Thermal Resistance, Junction?to?Ambient
RJA
Note 2
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(iF
= 1.0 Amp, T
J
= 150
°C)
(iF
= 1.0 Amp, T
J
= 25
°C)
vF
0.710
0.875
1.05
1.25
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TJ
= 150
°C)
(Rated DC Voltage, TJ
= 25
°C)
iR
50
2.0
150
5.0
A
Maximum Reverse Recovery Time
(IF
= 1.0 A, di/dt = 50 A/
s)
(IF
= 0.5 A, i
R
= 1.0 A, I
REC
= 0.25 A)
trr
35
25
75
50
ns
Maximum Forward Recovery Time
(IF
= 1.0 A, di/dt = 100 A/
s, IREC
to 1.0 V)
tfr
25
50
ns
Typical Peak Reverse Recovery Current
(IF
= 1.0 A, di/dt = 50 A/
s)
IRM
0.85
A
1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
相关PDF资料 |
PDF描述 |
|---|---|
| CAT28F512G12 | IC FLASH 512KBIT 120NS 32PLCC |
| VE-J63-CX-S | CONVERTER MOD DC/DC 24V 75W |
| 5745183-2 | CONN D-SUB RCPT STR 9POS T/H AU |
| EEC06DRES-S734 | CONN EDGECARD 12POS .100 EYELET |
| HHR-20SCPY14F2 | BATTERY PACK NIMH 2.4V 1900 MAH |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MUR140/4 | 制造商:Vishay Semiconductors 功能描述:Diode Switching 400V 1A 2-Pin DO-15 T/R |
| MUR140_09 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Ultrafast Plastic Rectifier |
| MUR140_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:1.0A SUPER-FAST RECTIFIER |
| MUR140-A | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:1.0A SUPER-FAST RECTIFIER |
| MUR140B | 制造商:YENYO 制造商全称:YENYO 功能描述:Surface Mount Efficient Fast Recovery Rectifier |
发布紧急采购，3分钟左右您将得到回复。