参数资料
型号: MUR1610CTG
厂商: ON Semiconductor
文件页数: 2/7页
文件大小: 120K
描述: DIODE ULT FAST 100V 8A TO220AB
标准包装: 50
系列: SWITCHMODE™
电压 - 在 If 时为正向 (Vf)(最大): 975mV @ 8A
电流 - 在 Vr 时反向漏电: 5µA @ 100V
电流 - 平均整流 (Io)(每个二极管): 8A
电压 - (Vr)(最大): 100V
反向恢复时间(trr): 35ns
二极管类型: 标准
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: MUR1610CTGOS
MUR1610CT, MUR1615CT, MUR1620CT, MUR1640CT, MUR1660CT
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MUR16
Unit
10CT
15CT
20CT
40CT
60CT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
100
150
200
400
600
V
Average Rectified Forward Current Per Leg
Total Device, (Rated VR), TC
= 150°C Total Device
IF(AV)
8.0
16
A
Peak Rectified Forward Current Per Diode Leg
(Rated VR, Square Wave, 20 kHz), TC
= 150°C
IFM
16
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
100
A
Operating Junction Temperature and Storage Temperature
TJ, Tstg
65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
(Per Diode Leg)
Parameter
Symbol
Value
Unit
Maximum Thermal Resistance, Junction?to?Case
RJC
3.0
2.0
°C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Characteristic
Symbol
1620
1640
1660
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(iF
= 8.0 A, T
C
= 150
°C)
(iF
= 8.0 A, T
C
= 25
°C)
vF
0.895
0.975
1.00
1.30
1.20
1.50
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TC
= 150
°C)
(Rated DC Voltage, TC
= 25
°C)
iR
250
5.0
500
10
A
Maximum Reverse Recovery Time
(IF
= 1.0 A, di/dt = 50 A/
s)
(IF
= 0.5 A, I
R
= 1.0 A, I
REC
= 0.25 A)
trr
35
25
60
50
ns
1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%
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