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参数资料
| 型号： | MUR1660CTG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 120K |
| 描述： | DIODE ULT FAST 600V 8A TO220AB |
| 产品目录绘图： | TO-220AB, TO-220, TO-220 ISO |
| 标准包装： | 50 |
| 系列： | SWITCHMODE™ |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.5V @ 8A |
| 电流 - 在 Vr 时反向漏电： | 10µA @ 600V |
| 电流 - 平均整流 (Io)（每个二极管）： | 8A |
| 电压 - (Vr)（最大）： | 600V |
| 反向恢复时间(trr)： | 60ns |
| 二极管类型： | 标准 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 产品目录页面： | 1566 (CN2011-ZH PDF) |
| 其它名称： | MUR1660CTGOS |
MUR1610CT, MUR1615CT, MUR1620CT, MUR1640CT, MUR1660CT
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MUR16
Unit
10CT
15CT
20CT
40CT
60CT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
100
150
200
400
600
V
Average Rectified Forward Current Per Leg
Total Device, (Rated VR), TC
= 150°C Total Device
IF(AV)
8.0
16
A
Peak Rectified Forward Current Per Diode Leg
(Rated VR, Square Wave, 20 kHz), TC
= 150°C
IFM
16
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
100
A
Operating Junction Temperature and Storage Temperature
TJ, Tstg
65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
(Per Diode Leg)
Parameter
Symbol
Value
Unit
Maximum Thermal Resistance, Junction?to?Case
RJC
3.0
2.0
°C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Characteristic
Symbol
1620
1640
1660
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(iF
= 8.0 A, T
C
= 150
°C)
(iF
= 8.0 A, T
C
= 25
°C)
vF
0.895
0.975
1.00
1.30
1.20
1.50
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TC
= 150
°C)
(Rated DC Voltage, TC
= 25
°C)
iR
250
5.0
500
10
A
Maximum Reverse Recovery Time
(IF
= 1.0 A, di/dt = 50 A/
s)
(IF
= 0.5 A, I
R
= 1.0 A, I
REC
= 0.25 A)
trr
35
25
60
50
ns
1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MUR1660CTR | 制造商:THINKISEMI 制造商全称:Thinki Semiconductor Co., Ltd. 功能描述:16.0 Ampere Heatsink Common Anode Ultra Fast Recovery Rectifier |
| MUR1660FC | 制造商:LUGUANG 制造商全称:Shenzhen Luguang Electronic Technology Co., Ltd 功能描述:Ultra Fast Rectifiers |
| MUR1660FCT | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:16 Amp Super Fast Recovery Rectifier 50 to 600 Volts |
| MUR1660GD | 制造商:THINKISEMI 制造商全称:Thinki Semiconductor Co., Ltd. 功能描述:16.0 Ampere Dual Doubler Polarity Ultra Fast Recovery Rectifier Diode |
| MUR170 | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:HIGH EFFICIENCY RECTIFIER |
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