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| 型号： | MUR3060WTG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 118K |
| 描述： | DIODE ULT FAST 600V 15A TO-247 |
| 产品目录绘图： | Rectifer TO-247 |
| 标准包装： | 30 |
| 系列： | SWITCHMODE™ |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.7V @ 15A |
| 电流 - 在 Vr 时反向漏电： | 10µA @ 600V |
| 电流 - 平均整流 (Io)（每个二极管）： | 15A |
| 电压 - (Vr)（最大）： | 600V |
| 反向恢复时间(trr)： | 60ns |
| 二极管类型： | 标准 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 产品目录页面： | 1566 (CN2011-ZH PDF) |
| 其它名称： | MUR3060WTGOS |
MUR3020WT, MUR3040WTG, MUR3060WT
http://onsemi.com
2
MAXIMUM RATINGS (Per Leg)
Rating
Symbol
MUR3020WT
MUR3040WT
MUR3060WT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
200
400
600
V
Average Rectified Forward Current @ 145°C
Total Device
IF(AV)
15
30
A
Peak Repetitive Surge Current
(Rated VR, Square Wave, 20 kHz, TC
= 145
°C)
IFM
30
A
Nonrepetitive Peak Surge Current (Surge applied at rated load
conditions, halfwave, single phase, 60 Hz)
IFSM
200
150
150
A
Operating Junction and Storage Temperature
TJ, Tstg
?
65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t
he
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Leg)
Rating
Symbol
MUR3020WT
MUR3040WT
MUR3060WT
Unit
Maximum Thermal Resistance,
?
Junction
?to?Case
?
Junction
?to?Ambient
RJC
RJA
1.5
40
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg)
Rating
Symbol
MUR3020WT
MUR3040WT
MUR3060WT
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(IF
= 15 Amp, T
C
= 150
°C)
(IF
= 15 Amp, T
C
= 25
°C)
VF
0.85
1.05
1.12
1.25
1.4
1.7
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TJ
= 150
°C)
(Rated DC Voltage, TJ
= 25
°C)
iR
500
10
500
10
1000
10
A
Maximum Reverse Recovery Time (iF
= 1.0 A, di/dt = 50 Amps/
s)
trr
35
60
60
ns
Typical Peak Reverse Recovery Current
(IF
= 1.0 A, di/dt = 50 A/
s)
IRM
0.7
A
1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MUR3060WTG | 制造商:ON Semiconductor 功能描述:FAST RECOVERY DIODE 30A 600V TO-247 |
| MUR3080 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MUR3080/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SWITCHMODE? Power Rectifier |
| MUR3080PT | 制造商:SIRECTIFIER 制造商全称:Sirectifier Semiconductors 功能描述:Ultra Fast Recovery Diodes |
| MUR310 | 制造商:DACHANG 制造商全称:Rugao Dachang Electronics Co., Ltd 功能描述:Plastic High-Efficiency Rectifiers Reverse Voltage 50 to 600V Forward Current 3.0A |
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