参数资料
型号: MUR420-E3/73
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 4 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD
封装: ROHS COMPLIANT, PLASTIC PACKAGE-2
文件页数: 2/4页
文件大小: 62K
代理商: MUR420-E3/73
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 88685
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 22-Oct-09
MUR420
Vishay General Semiconductor
Note
(1) Pulse test: tp = 300 μs pulse, duty cycle
≤ 2 %
Note
(1) Lead length = 1/2" on P.C.B. with 1.2" x 1.2" (30.5 mm x 30.5 mm) copper surface
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Maximum instantaneous
forward voltage
3.0 A
TJ = 150 °C
VF (1)
0.710
V
TJ = 25 °C
0.875
4.0 A
0.890
Maximum instantaneous reverse current
at rated DC blocking voltage
TJ = 25 °C
IR (1)
5.0
μA
TJ = 150 °C
150
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
25
ns
Maximum reverse recovery time
IF = 1.0 A, dI/dt = 50 A/μs,
VR = 30 V, Irr = 10 % IRM
trr
35
ns
Maximum forward recovery time
IF = 1.0 A, dI/dt = 100 A/μs,
recovery to 1.0 V
tfr
25
ns
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance junction to ambient
RθJA
(1)
28
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MUR420-E3/54
1.138
54
1400
13" diameter paper tape and reel
MUR420-E3/73
1.138
73
1000
Ammo pack packaging
0
2.0
4.0
6.0
8.0
0
25
50
75
100
125
150
175
Ambient Temperature (°C)
A
v
erage
Forwar
d
Curr
ent
(A)
0
50
75
100
125
150
25
1
100
10
Number of Cycles at 60 Hz
Peak
Forwar
d
S
ur
ge
Curr
ent
(A)
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