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| 型号： | MUR550APFRLG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 166K |
| 描述： | DIODE ULTR FAST 5A 500V DO-201AD |
| 产品变化通告： | Discontinuation 30/Jun/2006 |
| 标准包装： | 1,500 |
| 系列： | SWITCHMODE™ |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 520V |
| 电流 - 平均整流 (Io)： | 5A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.15V @ 5A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 反向恢复时间(trr)： | 95ns |
| 电流 - 在 Vr 时反向漏电： | 5µA @ 520V |
| 安装类型： | 通孔 |
| 封装/外壳： | DO-201AA，DO-27，轴向 |
| 供应商设备封装： | DO-201AD |
| 包装： | 带卷 (TR) |
     MUR550APFG, MURD550PFG, MUR550PFG, MURF550PFG, NRVUD550PFT4G http://onsemi.com 2 ORDERING INFORMATION Device Package Shipping? MUR550APFG Axial 500 Units/Bag MUR550APFRLG Axial 1,500 Tape & Reel MURD550PFT4G DPAK (Pb?Free) 2,500 Tape & Reel NRVUD550PFT4G DPAK (Pb?Free) 2,500 Tape & Reel MUR550PFG TO?220AC (Pb?Free) 50 Units/Rail MURF550PFG TO?220FP (Pb?Free) 50 Units / Rail ?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V V RRM RWM VR 520 V Average Rectified Forward Current (Rated VR) TC = 65 ?C MUR550APFG (Rated VR) TC = 160 ?C MURD550PFG, NRVUD550PFT4G, MUR550PFG, MURF550PFG IF(AV) 5.0 5.0 A Non?Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, 60 Hz) MUR550APFG NRVUD550PFT4G, MURD550PFG MUR550PFG, MURF550PFG IFSM 85 75 100 A Operating Junction Temperature Range TJ ?65 to +175 ?C Storage Temperature Range Tstg ?65 to +175 ?C ESD Ratings: Machine Model = C Human Body Model = 3B ESD > 400 > 8000 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction?to?Case (Note 1) MURD550PG, MUR550PFG, NRVUD550PFT4G MURF550PFG RJC 2.8 5.75 ?C/W Thermal Resistance, Junction?to?Ambient MUR550APFG NRVUD550PFT4G, MURD550PFG (Note 3), MURF550PFG RJA Note 2 62 75 ?C/W 1. Rating applies when surface mounted on the minimum pad sizes recommended. 2. See Note 2, Ambient Mounting Data. 3. 1 inch square pad size on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage Drop (Note 4) (IF = 5.0 A, T J = 25 ?C) (IF = 5.0 A, T J = 150 ?C) VF 1.15 0.98 V Maximum Instantaneous Reverse Current (Note 4) (VR = 520 V, T J = 25 ?C) (VR = 520 V, T J = 150 ?C) IR 5.0 400 A Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ s, VR = 30 V, T J = 25 ?C) trr 95 ns 4. Pulse Test: Pulse Width = 300 s, Duty Cycle ? 2.0%. |
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| MUR550PF | 功能描述:整流器 520V 5A UltraFast RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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| MUR60100PT | 制造商:SIRECTIFIER 制造商全称:Sirectifier Semiconductors 功能描述:快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。 |
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