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| 型号： | MUR805 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 137K |
| 描述： | DIODE ULTRA FAST 8A 50V TO-220AC |
| 产品变化通告： | Product Discontinuation 27/Jun/2007 |
| 标准包装： | 50 |
| 系列： | SWITCHMODE™ |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 50V |
| 电流 - 平均整流 (Io)： | 8A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 975mV @ 8A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 反向恢复时间(trr)： | 35ns |
| 电流 - 在 Vr 时反向漏电： | 5µA @ 50V |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-2 |
| 供应商设备封装： | TO-220-2 |
| 包装： | 管件 |
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MUR/SUR8
Unit
805
810
815
820
840
860
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
50
100
150
200
400
600
V
Average Rectified Forward Current
Total Device, (Rated VR), TC
= 150
°C
IF(AV)
8.0
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), TC
= 150
°C
IFM
16
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
100
A
Operating Junction Temperature and Storage Temperature Range
TJ, Tstg
?65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUR/SUR8
Unit
805
810
815
820
840
860
Maximum Thermal Resistance, Junction?to?Case
RJC
3.0
2.0
°C/W
Thermal Resistance, Junction?to?Case
MURF860
RJC
4.75
°C/W
Thermal Resistance, Junction?to?Ambient
RJA
73
°C/W
Thermal Resistance, Junction?to?Ambiente
MURF860
RJA
75
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
MUR/SUR8
Unit
805
810
815
820
840
860
Maximum Instantaneous Forward Voltage (Note 1)
(iF
= 8.0 A, T
C
= 150
°C)
(iF
= 8.0 A, T
C
= 25
°C)
vF
0.895
0.975
1.00
1.30
1.20
1.50
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TJ
= 150
°C)
(Rated DC Voltage, TJ
= 25
°C)
iR
250
5.0
500
10
A
Maximum Reverse Recovery Time
(IF
= 1.0 A, di/dt = 50 A/
s)
(IF
= 0.5 A, i
R
= 1.0 A, I
REC
= 0.25 A)
trr
35
25
60
50
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
相关PDF资料 |
PDF描述 |
|---|---|
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| MURD320T4 | DIODE ULTRA FAST 3A 200V DPAK |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MUR805CT | 制造商:GOOD-ARK 制造商全称:GOOD-ARK Electronics 功能描述:Glass Passivated Super Fast Rectifiers |
| MUR805G | 功能描述:整流器 50V 8A UltraFast RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MUR810 | 功能描述:整流器 100V 8A UltraFast RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MUR8100 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MUR8100E | 功能描述:整流器 TO-220AC Ultra Fast RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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