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| 型号： | MUR860G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 137K |
| 描述： | DIODE ULTRA FAST 8A 600V TO220AC |
| 产品目录绘图： | Rectifier TO-220AC, TO-220B |
| 标准包装： | 50 |
| 系列： | SWITCHMODE™ |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 600V |
| 电流 - 平均整流 (Io)： | 8A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.5V @ 8A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 反向恢复时间(trr)： | 60ns |
| 电流 - 在 Vr 时反向漏电： | 10µA @ 600V |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-2 |
| 供应商设备封装： | TO-220-2 |
| 包装： | 管件 |
| 产品目录页面： | 1566 (CN2011-ZH PDF) |
| 其它名称： | MUR860GOS |
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MUR/SUR8
Unit
805
810
815
820
840
860
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
50
100
150
200
400
600
V
Average Rectified Forward Current
Total Device, (Rated VR), TC
= 150
°C
IF(AV)
8.0
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), TC
= 150
°C
IFM
16
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
100
A
Operating Junction Temperature and Storage Temperature Range
TJ, Tstg
?65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUR/SUR8
Unit
805
810
815
820
840
860
Maximum Thermal Resistance, Junction?to?Case
RJC
3.0
2.0
°C/W
Thermal Resistance, Junction?to?Case
MURF860
RJC
4.75
°C/W
Thermal Resistance, Junction?to?Ambient
RJA
73
°C/W
Thermal Resistance, Junction?to?Ambiente
MURF860
RJA
75
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
MUR/SUR8
Unit
805
810
815
820
840
860
Maximum Instantaneous Forward Voltage (Note 1)
(iF
= 8.0 A, T
C
= 150
°C)
(iF
= 8.0 A, T
C
= 25
°C)
vF
0.895
0.975
1.00
1.30
1.20
1.50
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TJ
= 150
°C)
(Rated DC Voltage, TJ
= 25
°C)
iR
250
5.0
500
10
A
Maximum Reverse Recovery Time
(IF
= 1.0 A, di/dt = 50 A/
s)
(IF
= 0.5 A, i
R
= 1.0 A, I
REC
= 0.25 A)
trr
35
25
60
50
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MUR860H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| MUR860S | 制造商:SIRECTIFIER 制造商全称:Sirectifier Semiconductors 功能描述:快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。 |
| MUR860T | 制造商:SIRECT 制造商全称:Sirectifier Global Corp. 功能描述:Ultrafast Rectifier - 8Amp 600Volt |
| MUR860TF | 制造商:SIRECT 制造商全称:Sirectifier Global Corp. 功能描述:Ultrafast Rectifier - 8Amp 600Volt |
| MUR870 | 制造商:Harris Corporation 功能描述:Rectifier Diode, 700 Volt, TO-220AC |
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