参数资料
型号: MURB1620CT-1
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 整流器
英文描述: 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA
封装: MODIFIED TO-262, 3 PIN
文件页数: 1/7页
文件大小: 117K
代理商: MURB1620CT-1
Document Number: 94519
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 05-Sep-08
1
Ultrafast Rectifier,
2 x 8 A FRED PtTM
MURB1620CTPbF/MURB1620CT-1PbF
Vishay High Power Products
FEATURES
Ultrafast recovery time
Low forward voltage drop
Low leakage current
175 °C operating junction temperature
Lead (Pb)-free (“PbF” suffix)
Designed and qualified for AEC Q101 level
DESCRIPTION/APPLICATIONS
MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time control,
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
trr
25 ns
IF(AV)
2 x 8 A
VR
200 V
MURB1620CTPbF
D2PAK
MURB1620CT-1PbF
TO-262
Base
common
cathode
Common
cathode
Anode
1
Anode
2
12
3
Base
common
cathode
Common
cathode
Anode
1
Anode
2
12
3
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Peak repetitive reverse voltage
VRRM
200
V
Average rectified forward current
per leg
IF(AV)
8.0
A
total device
Rated VR, TC = 150 °C
16
Non-repetitive peak surge current per leg
IFSM
100
Peak repetitive forward current per leg
IFM
Rated VR, square wave, 20 kHz, TC = 150 °C
16
Operating junction and storage temperatures
TJ, TStg
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 A
200
-
V
Forward voltage
VF
IF = 8 A
-
0.975
IF = 8 A, TJ = 150 °C
-
0.895
Reverse leakage current
IR
VR = VR rated
-
5
A
TJ = 150 °C, VR = VR rated
-
250
Junction capacitance
CT
VR = 200 V
-
25
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8.0
-
nH
* Pb containing terminations are not RoHS compliant, exemptions may apply
相关PDF资料
PDF描述
MURB1620CTTRRP 8 A, 200 V, SILICON, RECTIFIER DIODE
MURB1620CTPBF 8 A, 200 V, SILICON, RECTIFIER DIODE
MURB820CT-1TRL 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA
MURB820CT-1TRLPBF 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA
MURB820CT-1TRR 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA
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