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参数资料
| 型号： | MURC110 |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1 A, SILICON, SIGNAL DIODE |
| 封装： | DIE-2 |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 代理商： | MURC110 |
SENSITRON
SEMICONDUCTOR
Data Sheet 4853, Rev.-
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
MURC105-MURC160
Technical Data
MURC105-MURC160
Ultrafast Silicon Die
Applications:
Switching Power Supply General Purpose Free-Wheeling Diodes Polarity Protection
Diode
Features:
Glass-Passivated
Epitaxial Construction.
Low Reverse Leakage Current
High Surge Current Capability
Low Forward Voltage Drop
Fast Reverse-Recovery Behavior
Maximum Ratings:
Characteristics
Symbol
MURC
105
MURC
110
MURC
115
MURC
120
MURC
130
MURC
140
MURC
160
Unit
Peak Inverse Voltage
VRWM
50
100
150
200
300
400
600
V
Average Rectified Forward
Current(Square Wave Mounting
Method #3 Per Note1)
IF(AV)
1.0 @ TA = 130°C
1.0 @ TA = 120°C
A
Max. Peak One Cycle Non-
Repetitive Surge Current
8.3 ms, half Sine pulse
IFSM
35
A
Operating JunctionTemperature
and Storage Temperature
TJ, Tstg
-65 to +175
°C
Electrical Characteristics:
Characteristics
Symbol
MURC
105
MURC
110
MURC
115
MURC
120
MURC
130
MURC
140
MURC
160
Unit
Max. Forward Voltage Drop(Note1)
(IF = 1.0 Amp, TJ = 150 °C)
(IF = 1.0 Amp, TJ = 25 °C)
VF
0.710
0.875
1.05
1.25
V
Max. Reverse Current (Note1)
(Rated DC Voltage, TJ = 150 °C)
(Rated DC Voltage, TJ = 25 °C)
IR
50
2.0
150
5.0
A
Max Reverse Recovery Time
(IF = 1.0 Amp, di/dt = 50 A/s)
(IF = 0.5 Amp, IR = 1.0 A,
IREC=0.25A)
trr
35
25
75
50
nS
Max. Junction Capacitance
@VR = 5V, TC = 25 °C
fSIG = 1MHz, VSIG = 50mV (p-p)
CT
30
10
pF
Max Forward Recovery Time
(IF = 1.0 Amp, di/dt = 50 A/s, IREC
to 1.0V)
Tfr
25
50
nS
1. Pulse Test: Pulse Width = 300s, Duty Cycle ≤2%
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