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参数资料
| 型号： | MURF1005CT-BP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC, ITO-220AB, FULL PACK-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 857K |
| 代理商： | MURF1005CT-BP |
MURF1005CT thru MURF1040CT
www.mccsemi.com
MCC
RATING AND CHARACTERISTIC CURVES
10
8
6
4
2
0
50
100
150
CASE TEMPERATURE, J
40
20
10
8
6
4
2
1.0
.8
. .6
.4
.2
.1
.6
.7
.8
9
1.0
1.1
1.2
1.3
50. 100. 150. 200V
300. 400V
TJ = 25J
PULSE WIDTH = 200
gs
INSTANTANEOUS FORWARD CHARACTERISTIC
Fig. 1-FORWARD CURRENT DERATING CURVE
Fig. 2-TYPICAL INSTNATANEOUS FORWARD
CHARACTERISTIC
1000
100
10
1
.01
0
100
200
300
TC = 100 J
TC = 75J
T
C = 25J
150
130
110
90
70
50
30
20
10
1
2
5
10
20
50
100
8.3ms SINGLE HALF SINE
WAVE JEDEC METHOD
NO. OF CYCLES AT 60Hz
Fig. 3-TYPICAL REVERSE CHARACTERISTICS
Fig. 4-MAXIMUM NON-REPETITIVE SURGE CURRENT
.
80
70
60
50
40
30
1
2
5
20
50
100
200
500
TJ = 25 J
REVERSE VOLTAGE, VOLTS
Fig. 5-TYPICAL JUNCTION CAPACITANCE
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Revision: 3
2003/04/30
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MURF10060 | 功能描述:整流器 SI S-FST REC TO244AB 50-600V100A600P/420R RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MURF10060R | 功能描述:整流器 SI S-FST REC TO244AB 50-600V100A600P/420R RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MURF1010 | 制造商:DIOTECH 制造商全称:DIOTECH 功能描述:SUPER FAST RECOVERY SILICON RECTIFIER |
| MURF1010CT | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:Dual Ultrafast Plastic Rectifiers |
| MURF1015 | 制造商:DIOTECH 制造商全称:DIOTECH 功能描述:SUPER FAST RECOVERY SILICON RECTIFIER |
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