- 您现在的位置：买卖IC网 > PDF目录296651 > MURHB840CTT4 (MOTOROLA INC) 4 A, 400 V, SILICON, RECTIFIER DIODE PDF资料下载
参数资料
| 型号： | MURHB840CTT4 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 4 A, 400 V, SILICON, RECTIFIER DIODE |
| 文件页数： | 3/6页 |
| 文件大小： | 107K |
| 代理商： | MURHB840CTT4 |
MURHB840CT
3
Rectifier Device Data
Figure 5. Forward Power Dissipation, Per Leg
P
F(A
V)
,A
VERAGE
POWER
DISSIP
A
TION
(W
A
TTS)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
1
20
18
16
14
12
10
8
6
4
2
0
2
3
4
5
67
89
10
TJ = 175°C
SQUARE WAVE
DC
INFORMATION FOR USING THE D2PAK SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must be
the correct size to insure proper solder connection interface
between the board and the package. With the correct pad
geometry, the packages will self align when subjected to a
solder reflow process.
mm
inches
0.74
18.79
0.065
1.651
0.07
1.78
0.14
3.56
0.330
8.38
0.420
10.66
D2PAK POWER DISSIPATION
The power dissipation of the D2PAK is a function of the drain
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined by
TJ(max), the maximum rated junction temperature of the die,
R
θJA, the thermal resistance from the device junction to
ambient; and the operating temperature, TA. Using the values
provided on the data sheet for the D2PAK package, PD can be
calculated as follows:
PD =
TJ(max) – TA
R
θJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this case
is 3.0 watts.
PD =
175
°C – 25°C
50
°C/W
= 3.0 watts
The 50
°C/W for the D2PAK package assumes the
recommended drain pad area of 158K mil2 on FR–4 glass
epoxy printed circuit board to achieve a power dissipation of
3.0 watts using the footprint shown. Another alternative is to
use a ceramic substrate or an aluminum core board such as
Thermal Clad
. By using an aluminum core board material
such as Thermal Clad, the power dissipation can be doubled
using the same footprint.
相关PDF资料 |
PDF描述 |
|---|---|
| MURHB860CT | 4 A, 600 V, SILICON, RECTIFIER DIODE |
| MURS120CSM4 | 1 A, 200 V, SILICON, SIGNAL DIODE |
| MUSB-05-F-AB-SM-A-TR | 5 CONTACT(S), MALE, RIGHT ANGLE TELECOM AND DATACOM CONNECTOR, SURFACE MOUNT |
| MUSB-05-S-AB-SM-A-TR | 5 CONTACT(S), MALE, RIGHT ANGLE TELECOM AND DATACOM CONNECTOR, SURFACE MOUNT |
| MUSBMUSB-05-F-AB-SM-A | 5 CONTACT(S), FEMALE, RIGHT ANGLE TELECOM AND DATACOM CONNECTOR, SURFACE MOUNT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MURHB840CTT4G | 功能描述:整流器 400V 8A Ultrafast RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MURHB860CT | 功能描述:整流器 600V 8A Ultrafast RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MURHB860CT/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:MEGAHERTZ? Power Rectifier |
| MURHB860CTG | 功能描述:整流器 600V 8A Ultrafast RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MURHB860CTT4 | 功能描述:整流器 600V 8A Ultrafast RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。