参数资料
型号: MURS120TRPBF
元件分类: 参考电压二极管
英文描述: 1 A, 200 V, SILICON, SIGNAL DIODE
封装: LEAD FREE, SMB, 2 PIN
文件页数: 4/6页
文件大小: 113K
代理商: MURS120TRPBF
MURS120PbF
Bulletin PD-20877 11/04
4
www.irf.com
(3) Formula used: T
C = TJ - (Pd + PdREV) x RthJC ;
Pd = Forward Power Loss = I
F(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
Pd
REV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR
Fig. 5 - Max. Allowable Lead Temperature
Vs. Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Average
Power
Loss
(Watts
)
trr
(ns
)
Qrr
(nC
)
Average Forward Current - IF
(AV) (A)
Allowable
Lead
Temperature
(°C)
Average Forward Current - IF
(AV) (A)
Fig. 8 - Typical Stored Charge vs. di F /dt
Fig. 7 - Typical Reverse Recovery vs. di F /dt
di F/dt (A/s )
di F /dt (A/s )
140
150
160
170
180
0
0.4
0.8
1.2
1.6
DC
Square wave (D = 0.50)
Rated Vr applied
see note (3)
0
0.2
0.4
0.6
0.8
1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
DC
RMS Limit
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
1
10
100
1000
Vr = 30V
If = 1A
Tj = 25C
1
10
100
1000
Vr = 30V
If = 1A
Tj = 25C
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