参数资料
型号: MURS340-HE3
厂商: VISHAY SEMICONDUCTORS
元件分类: 整流器
英文描述: 4 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB
封装: LEAD FREE, PLASTIC, SMC, 2 PIN
文件页数: 2/4页
文件大小: 208K
代理商: MURS340-HE3
www.vishay.com
2
Document Number 88816
04-Aug-05
MURS340 & MURS360
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified#
Notes:
(1) Pulse test: tp = 300 s, duty cycle ≤ 2 %
Thermal Characteristics
TA = 25 °C unless otherwise specified
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
Symbol
MURS340
MURS360
Unit
Maximum instantaneous
forward voltage (1)
IF = 3.0 A,
IF = 4.0 A,
IF = 3.0 A,
TJ = 25 °C
TJ = 150 °C
VF
1.25
1.28
1.05
V
Maximum instantaneous
reverse current at rated DC
blocking voltage (1)
TJ = 25 °C
TJ = 150 °C
IR
10
250
A
Maximum reverse recovery
time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
50
ns
Maximum reverse recovery
time
at IF = 1.0 A, di/dt = 50 A/s,
VR = 30 V, Irr = 10 % IRM
trr
75
ns
Maximum forward recovery
time
IF = 1.0 A, di/dt = 100 A/s,
Rec. to 1.0 V
tfr
25
ns
Parameter
Symbol
MURS340
MURS360
Unit
Typical thermal resistance junction to ambient
RθJL
11
°C/W
Figure 1. Forward Current Derating Curve
0
2
3
4
5
25
50
75
100
125
150
175
A
verage
Forward
Current
(A)
TL -- Lead Temperature ( °C)
1
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
25
0
50
75
100
125
150
1
100
10
A
verage
Forward
Current
(A)
Number of Cycles at 60 HZ
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