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参数资料
| 型号： | MV104RLRA |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 39.5 pF, 32 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-92 |
| 封装： | CASE 29-11, TO-226AA, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 118K |
| 代理商： | MV104RLRA |
Silicon Tuning Diode
This device is designed for FM tuning, general frequency control
and tuning, or any top–of–the–line application requiring
back–to–back diode configurations for minimum signal distortion and
detuning.
High Figure of Merit Q = 140 (Typ) @ V
R = 3.0 Vdc, f = 100
MHz
Guaranteed Capacitance Range
37–42 pF @ VR = 3.0 Vdc (MV104)
Dual Diodes – Save Space and Reduce Cost
Monolithic Chip Provides Near Perfect Matching – Guaranteed ±
1.0% (Max) Over Specified Tuning Range
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
32
Vdc
Forward Current
IF
200
mAdc
Total Power Dissipation @ TA = 25°C
Derate above 25
°C
PD
280
2.8
mW
mW/
°C
Junction Temperature
TJ
+125
°C
Storage Temperature Range
Tstg
–55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 Adc)
V(BR)R
32
—
Vdc
Reverse Voltage Leakage Current TA = 25°C
(VR = 30 Vdc)
TA = 60°C
IR
—
50
500
nAdc
Diode Capacitance Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
TCC
—
280
—
ppm/
°C
CT, Diode Capacitance
VR = 3.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
VR = 3.0 Vdc
f = 100 MHz
CR, Capacitance Ratio
C3/C30
f = 1.0 MHz
Device
Min
Max
Min
Typ
Min
Max
MV104
37
42
100
140
2.5
2.8
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 2
1028
Publication Order Number:
MV104/D
MV104
DUAL
VOLTAGE VARIABLE
CAPACITANCE DIODE
CASE 29–11, STYLE 15
TO–92 (TO–226AA)
1
2
3
Pin 1
A1
Pin 3
A2
Pin 2
C
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