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参数资料
| 型号： | MV1N5188US |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, SILICON, RECTIFIER DIODE |
| 封装： | HERMETICALLY SEALED GLASS, D-5B, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 281K |
| 代理商： | MV1N5188US |
VOIDLESS-HERMETICALLY SEALED
SURFACE MOUNT FAST RECOVERY
GLASS RECTIFIERS
SCOTTSD A L E DIVISION
1N5186US thru 1N5190US
W
.Mi
cr
os
em
i
.C
O
M
1N5186
thru
1N5190
DESCRIPTION
APPEARANCE
This “fast recovery” rectifier diode series is ideal for high-reliability applications
where a failure cannot be tolerated. These industry-recognized 3.0 Amp rated
rectifiers for working peak reverse voltages from 100 to 600 volts are hermetically
sealed with voidless-glass construction using an internal “Category I” metallurgical
bond. These devices are also available in military qualified axial-leaded packages
by deleting the “US” suffix. Microsemi also offers numerous other rectifier products
to meet higher and lower current ratings with various recovery time speed
requirements including fast and ultrafast device types in both through-hole and
surface mount packages.
Package “E”
or D-5B
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Surface mount equivalent to the popular JEDEC
registered 1N5186 to 1N5190 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category I” Metallurgical bonds
Working Peak Reverse Voltage 100 to 600 Volts.
Further options in screening in accordance with MIL-
PRF-19500/424 for JAN, JANTX, and JANTXV by adding
a MQ, MX, or MV prefix respectively, e.g. MX1N5186US,
MV1N5187US, etc.
Axial-leaded package equivalents also available (see
separate data sheet for 1N5186 thru 1N5190)
Fast recovery 3 Amp rectifiers 100 to 600 V
Military and other high-reliability applications
General rectifier applications including bridges,
half-bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in
Microsemi MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Junction & Storage Temperature: -65oC to +175oC
Thermal Resistance: 10oC/W junction to end cap
Thermal Impedance: 1.5oC/W @ 10 ms heating time
Average Rectified Forward Current (IO): 3.0 Amps @ TA =
25C and 0.700 Amps at TA = 150C
Forward Surge Current: 80 Amps @ 8.3 ms half-sine
Solder Temperatures: 260C for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: End caps are solid silver with
Tin/Lead (Sn/Pb) finish
MARKING: Cathode band only
POLARITY: Cathode indicated by band
TAPE & REEL option: Standard per EIA-481-B
WEIGHT: 539 mg
See package dimensions on last page
ELECTRICAL
CHARACTERISTICS
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ 50A
FORWARD
VOLTAGE
VF
@ 9A (pulsed)
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
MAXIMUM
REVERSE
RECOVERY
TIME
trr
AVERAGE
RECTIFIED
CURRENT AMPS
IO
25
oC
100
oC
25
oC
150
oC
TYPE
VOLTS
MIN
VOLTS
MAX
VOLTS
A
ns
AMPS
1N5186US
1N5187US
1N5188US
1N5189US
1N5190US
100V
200V
400V
500V
600V
120V
240V
480V
550V
660V
0.9V
1.5V
2.0
100
150
200
250
300
400
3.0
0.7
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2004
12-10-2004 REV A
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