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参数资料
| 型号： | MV2101RLRE |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 变容二极管 |
| 英文描述： | 6.8 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92 |
| 封装： | PLASTIC, CASE 182-06, TO-226AC, 2 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 132K |
| 代理商： | MV2101RLRE |
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
http://onsemi.com
686
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
TR, Tuning Ratio
C2/C30
f = 1.0 MHz
Device
Min
Nom
Max
Typ
Min
Typ
Max
MMBV2101LT1/MV2101
6.1
6.8
7.5
450
2.5
2.7
3.2
MMBV2103LT1
9.0
10
11
400
2.5
2.9
3.2
LV2205/MMBV2105LT1/MV2105
13.5
15
16.5
400
2.5
2.9
3.2
MMBV2107LT1
19.8
22
24.2
350
2.5
2.9
3.2
MMBV2108LT1
24.3
27
29.7
300
2.5
3.0
3.2
LV2209MMBV2109LT1/MV2109
29.7
33
36.3
200
2.5
3.0
3.2
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and
drop the ”T1” suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
1. CT, DIODE CAPACITANCE
(CT = CC + CJ). CT is measured at 1.0 MHz using a
capacitance bridge (Boonton Electronics Model 75A or
equivalent).
2. TR, TUNING RATIO
TR is the ratio of CT measured at 2.0 Vdc divided by CT
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an
admittance
bridge
at
the
specified
frequency
and
substituting in the following equations:
Q
+ 2pfC
G
(Boonton Electronics Model 33AS8 or equivalent). Use
Lead Length
[ 1/16”.
4. TCC, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0
MHz, TA = –65°C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA
= +85
°C in the following equation, which defines TCC:
TCC +
CT() 85°C) – CT(–65°C)
85
) 65
106
CT(25°C)
Accuracy limited by measurement of CT to ±0.1 pF.
相关PDF资料 |
PDF描述 |
|---|---|
| MV2109RL1 | 33 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92 |
| MV5297 | RECTIFIER DIODE, DO-7 |
| MV5296 | RECTIFIER DIODE, DO-7 |
| MX5299 | RECTIFIER DIODE, DO-7 |
| SMAJ5302 | RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MV2104 | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Silicon Tuning Diode |
| MV2105 | 功能描述:变容二极管 30V 13.5pF RoHS:否 制造商:Skyworks Solutions, Inc. 电容:5.2 pF 反向电压:10 V 正向连续电流:20 mA 端接类型:SMD/SMT 封装 / 箱体:SC-79 封装:Reel |
| MV2105G | 功能描述:变容二极管 30V 13.5pF RoHS:否 制造商:Skyworks Solutions, Inc. 电容:5.2 pF 反向电压:10 V 正向连续电流:20 mA 端接类型:SMD/SMT 封装 / 箱体:SC-79 封装:Reel |
| MV2105RLRA | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MV2106 | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Silicon Tuning Diode |
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