Semiconductor Components Industries, LLC, 2001
October, 2001 – Rev. 3
685
Publication Order Number:
MMBV2101LT1/D
MMBV2101LT1 Series,
MV2105, MV2101, MV2109,
LV2205, LV2209
Silicon Tuning Diodes
6.8–100 pF, 30 Volts
Voltage Variable Capacitance Diodes
These devices are designed in popular plastic packages for the high
volume requirements of FM Radio and TV tuning and AFC, general
frequency control and tuning applications. They provide solid–state
reliability in replacement of mechanical tuning methods. Also
available in a Surface Mount Package up to 33 pF.
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance – 10%
Complete Typical Design Curves
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
Vdc
Forward Current
IF
200
mAdc
Forward Power Dissipation
@ TA = 25°C
MMBV21xx
Derate above 25
°C
@ TA = 25°C
MV21xx
Derate above 25
°C
LV22xx
PD
225
1.8
280
2.8
mW
mW/
°C
Junction Temperature
TJ
+150
°C
Storage Temperature Range
Tstg
–55 to +150
°C
DEVICE MARKING
MMBV2101LT1 = M4G
MMBV2108LT1 = 4X
MV2109 = MV2109
MMBV2103LT1 = 4H
MMBV2109LT1 = 4J
LV2205 = LV2205
MMBV2105LT1 = 4U
MV2101 = MV2101
LV2209 = LV2209
MMBV2107LT1 = 4W
MV2105 = MV2105
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 Adc)
MMBV21xx, MV21xx
LV22xx
V(BR)R
30
25
–
Vdc
Reverse Voltage Leakage
Current
(VR = 25 Vdc, TA = 25°C)
IR
–
0.1
Adc
Diode Capacitance
Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
TCC
–
280
–
ppm/
°C
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
MARKING
DIAGRAM
3
Cathode
1
Anode
2
Cathode
1
Anode
SOT–23
TO–92
1
2
3
1
2
XX
XXXX
YWW
TO–226AC, TO–92
CASE 182
STYLE 1
TO–236AB, SOT–23
CASE 318–08
STYLE 8
XXX M
XXX
= Device Code*
M
= Date Code
* See Table
XX
= Device Code Line 1*
XXXX
= Device Code Line 2*
M
= Date Code
* See Table