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| 型号： | MVGSF1N03LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 1.6A SOT-23-3 |
| 标准包装： | 3,000 |
| 系列： | * |
MGSF1N03L, MVGSF1N03L
Power MOSFET
30 V, 2.1 A, Single N ? Channel, SOT ? 23
These miniature surface mount MOSFETs low R DS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc ? dc converters and power management in portable
and battery ? powered products such as computers, printers, PCMCIA
http://onsemi.com
cards, cellular and cordless telephones.
Features
? Low R DS(on) Provides Higher Efficiency and Extends Battery Life
? Miniature SOT ? 23 Surface Mount Package Saves Board Space
? AEC ? Q101 Qualified and PPAP Capable ? MVGSF1N03LT1
? These Devices are Pb ? Free and are RoHS Compliant
V (BR)DSS
30 V
R DS(on) TYP
80 m W @ 10 V
125 m W @ 4.5 V
N ? Channel
D
I D MAX
2.1 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
G
Continuous Drain
Current R q JL
Power Dissipation
R q JL
Continuous Drain
Current (Note 1)
Steady
State
Steady
State
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
I D
P D
I D
2.1
1.5
0.69
1.6
1.2
A
W
A
S
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
Power Dissipation
(Note 1)
Pulsed Drain Current
ESD Capability
(Note 3)
T A = 25 ° C
t p = 10 m s
C = 100 pF,
RS = 1500 W
P D
I DM
ESD
0.42
6.0
125
W
A
V
1
SOT ? 23
CASE 318
STYLE 21
N3 M G
G
1 2
Gate Source
Operating Junction and Storage Temperature
Source Current (Body Diode)
T J , T STG
I S
? 55 to 150
2.1
° C
A
N3
M
G
= Specific Device Code
= Date Code*
= Pb ? Free Package
Lead Temperature for Soldering Purposes
(1/8” from case for 10 sec)
THERMAL RESISTANCE RATINGS
Parameter
T L
Symbol
260
Max
° C
Unit
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Junction ? to ? Foot ? Steady State
Junction ? to ? Ambient ? Steady State (Note 1)
Junction ? to ? Ambient ? t < 10 s (Note 1)
R q JL
R q JA
R q JA
180
300
250
° C/W
Device
MGSF1N03LT1G
Package
SOT ? 23
Pb ? Free
Shipping ?
3000 / Tape &
Reel
Junction ? to ? Ambient ? Steady State (Note 2) R q JA 400
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 650 mm 2 , 1 oz. Cu pad size.
2. Surface ? mounted on FR4 board using 50 mm 2 , 1 oz. Cu pad size.
3. ESD Rating Information: HBM Class 0.
MGSF1N03LT3G SOT ? 23 10000 / Tape &
(Pb ? Free) Reel
MVGSF1N03LT1G SOT ? 23 3000 / Tape &
(Pb ? Free) Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
September, 2012 ? Rev. 10
1
Publication Order Number:
MGSF1N03LT1/D
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| MVH100VC22RMJ10TP | 功能描述:CAP ALUM 22UF 100V 20% SMD RoHS:否 类别:电容器 >> 铝 系列:MVH 标准包装:2,000 系列:142 RHS 电容:4700µF 额定电压:10V 容差:±20% 寿命@温度:105°C 时为 2000 小时 工作温度:-40°C ~ 105°C 特点:通用 纹波电流:1.26A ESR（等效串联电阻）:- 阻抗:- 安装类型:通孔 封装/外壳:径向，Can 尺寸/尺寸:0.492" 直径（12.50mm） 高度 - 座高（最大）:1.063"（27.00mm） 引线间隔:0.197"（5.00mm） 表面贴装占地面积:- 包装:散装 |
| MVH100VC47RMK14TP | 功能描述:CAP ALUM 47UF 100V 20% SMD RoHS:否 类别:电容器 >> 铝 系列:MVH 标准包装:2,000 系列:142 RHS 电容:4700µF 额定电压:10V 容差:±20% 寿命@温度:105°C 时为 2000 小时 工作温度:-40°C ~ 105°C 特点:通用 纹波电流:1.26A ESR（等效串联电阻）:- 阻抗:- 安装类型:通孔 封装/外壳:径向，Can 尺寸/尺寸:0.492" 直径（12.50mm） 高度 - 座高（最大）:1.063"（27.00mm） 引线间隔:0.197"（5.00mm） 表面贴装占地面积:- 包装:散装 |
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