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参数资料
| 型号： | MVMSV101C |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 限压二极管 |
| 英文描述： | SILICON, STABISTOR DIODE, DO-201AA |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 2/3页 |
| 文件大小： | 282K |
| 代理商： | MVMSV101C |
BIDIRECTIONAL VARISTORS
SCOTTSD A L E DIVISION
MSV101A thru MSV101G
MSV201A thru MSV701A
W
.Mi
cr
os
em
i
.C
O
M
S
V
10
1A
–
10
1G
an
d
M
S
V
20
1A
–
70
1A
ELECTRICAL CHARACTERISTICS
MICROSEMI
PART
NUMBER
VBR @ IBR
V /
A
Minimum
VBR @ IBR
V / mA
Maximum
VC1 @ IPP*
V / A
Maximum
CJ @ 0 VOLTS
f = 1 MHz
pF
Maximum
VC2**
V
Maximum
MSV101A
MSV101B
MSV101C
.05 / 10
.14 / 100
.05 / 10
.14 / 100
.05 / 10
.14 / 100
-
.51 / 1,000
-
.66 / 1,000
-
.50 / 1,000
-
200
-
MSV101D
MSV101E
MSV101F
.43 / 100
.56 / 1,000
.43 / 100
.56 / 1,000
.20 / 10
.56 / 1,000
.72 / 10
-
.90 / 100
-
.90 / 100
-
1.5 / 50
-
1.5 / 50
-
1.5 / 50
-
1500
3.8
MSV101G
MSV201A
MSV301A
.20 / 10
.56 / 1,000
.86 / 100
1.10 / 1,000
-
1.60 / 1,000
.90 / 100
-
1.48 / 10
-
2.40 / 50
1.5 / 50
-
3.0 / 45
-
4.5 / 40
-
1500
750
500
3.8
4.4
5.4
MSV401A
MSV401B
MSV401C
1.72 / 100
2.20 / 1,000
1.30 / 10
2.20 / 1,000
-
2.20 / 1,000
2.92 / 10
-
2.92 / 10
-
3.10 / 50
4.5 / 35
-
5.5 / 35
-
5.5 / 35
-
400
6.4
MSV501A
MSV601A
MSV701A
1.70 / 10
2.80 / 1,000
1.30 / 10
2.20 / 1,000
-
2.20 / 1,000
5.00 / 100
-
4.60 / 100
-
5.00 / 5.0
-
6.5 / 30
-
8.0 / 30
-
9.0 / 30
-
300
250
220
7.4
8.4
9.4
* Conditions: Pulse is 10/1000
s wave shape.
** Per U.L.497B with 100 V/
s rise time.
-
10
s rise, 1000 s triangle fall to amplitude.
-
Voltage limits measured at IPP peak pulse current.
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2003
12-23-2003 REV A
相关PDF资料 |
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|---|---|
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| MVMSV601ATR | SILICON, STABISTOR DIODE, DO-201AA |
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| MXMSV101ATR | SILICON, STABISTOR DIODE, DO-201AA |
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