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参数资料
| 型号： | MWT-1 |
| 厂商： | MICROWAVE TECHNOLOGY INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| 文件页数： | 1/2页 |
| 文件大小： | 101K |
| 代理商： | MWT-1 |
MwT-1
12 GHz High Gain
GaAs FET
MwT-1
12 GHz High Gain
GaAs FET
10 dB GAIN AT 12 GHz
EXCELLENT FOR FEEDBACK AMPLIFIER APPLICATIONS
100 MHz TO 12 GHz
0.3 MICRON REFRACTORY METAL/GOLD GATE
630 MICRON GATE WIDTH
CHOICE OF CHIP AND THREE PACKAGE TYPES
SYMBOL
PARAMETERS AND CONDITIONS
FREQ
UNITS
MIN
TYP
P1dB
SSG
GA
IDSS
Output Power at 1 dB Compression
VDS= 5.0 V IDS= 0.6 x IDSS
Small Signal Gain
VDS= 5.0 V IDS= 0.6 x IDSS
Gain@Opt. NF
VDS= 3.0V IDS= 30 mA
Recommended IDSS Range
for Optimum P1dB
12 GHz
dBm
dB
mA
9.0
24.0
10.0
7.0
120-
210
RF SPECIFICATIONS AT Ta = 25
°°°°°C
DESCRIPTION
The MwT-1 is a GaAs MESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally suited to
applications requiring high-gain in the 100 MHz to 12 GHz frequency range. The straight geometry of the MwT-1 makes it equally
effective for either wideband (e.g. 2 to 6 GHz) or narrow-band applications. The chip is produced using MwT’s reliable metal system and
devices from each wafer are screened to insure reliability. All chips are passivated using MwT’s patented “Diamond-Like Carbon” process
for increased durability, Designers can use MwT’s unique BIN selection feature to choose devices from narrow Idss ranges, insuring
consistent circuit operation.
255
50
255
775
70
241
CHIP THICKNESS = 125
DC SPECIFICATIONS AT Ta = 25
°°°°°C
SYMBOL
PARAM. & CONDITIONS
UNITS
MIN
TYP
MAX
IDSS
Gm
Vp
BVGSO
BVGDO
Saturated Drain Current
Vds= 4.0 V VGS= 0.0 V
Transconductance
Vds= 4.0 V VGS= 0.0 V
Pinch-off Voltage
Vds= 3.0 V IDS= 4.0 mA
Gate-to-Source Breakdown Volt.
Igs= -1.0 mA
Gate-to-Drain Breakdown Volt.
Igd= -1.0 mA
mA
60
-2.0
240
mS
90
120
-5.0
V
°C/W
-5.0
-6.0
-10.0
80
180*
Lg
Rg
Rd
Ld
Cgd
GATE
DRAIN
Cgs
Cpg
Rds
Cds
Cpd
Ri
Rs
Ls
gm
tau
SOURCE
DEVICE EQUIVALENT CIRCUIT MODEL
Gate Bond Wire Inductance
Gate Pad Capacitance
Gate Resistance
Gate-Source Capacitance
Channel Resistance
Gate-Drain Capacitance
Transconductance
Transit Time
Lg
Cpg
Rg
Cgs
Ri
Cgd
gm
tau
0.2
nH
0.09
pF
0.83
0.64
pF
4.11
0.06
pF
130.0
mS
2.0
psec
Source Resistance
Source Inductance
Drain-Source Resistance
Drain-Source Capacitance
Drain Resistance
Drain Pad Capacitance
Drain Inductance
VALUE
PARAMETER
Rs
Ls
Rds
Cds
Rd
Cpd
Ld
1.88
0.04
nH
90
0.001
pF
2.9
0.145
pF
0.32
nH
Rth
Thermal
Resistance
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
DC SPECIFICATIONS AT Ta = 25
°°°°°C
RF SPECIFICATIONS AT Ta = 25
°°°°°C
FEATURES
NOTE:
For Package information, please see supplimentary application note from our website at
www.mwtinc.com. When placing order or inquiring, please specify BIN range, wafer no., if
known, and screening level required.
ORDERING INFORMATION
Chip
MwT-1
Package 70
MwT-170
Package 71
MwT-171
Package 73
MwT-173
All Dimensions in Microns
MwT-1 Chip, 171
MwT-170, 173
*Overall Rth depends on case mounting.
DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM
50
75
23.0
NFopt
Optimum Noise Figure
VDS= 3.0 V IDS= 30 mA
12 GHz
dB
2.0
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