参数资料
型号: MWT-4
厂商: MICROWAVE TECHNOLOGY INC
元件分类: 小信号晶体管
英文描述: K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
文件页数: 2/2页
文件大小: 100K
代理商: MWT-4
MwT-4
26 GHz Low Noise
GaAs FET
MwT-4
26 GHz Low Noise
GaAs FET
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
100
°°°°°C or Lower
125
100
°°°°°C or Lower
125
150
0
2
4
6
8
60.0
40.0
20.0
0
Vds (V)
Ids
(mA)
Absolute Maximum Continuous Maximum
SAFE OPERATING LIMITS vs. BACKSIDE CHIP
MAXIMUM RATINGS AT Ta = 25
°°°°°C
SYMBOL
VDS
Tch
Tst
Pin
PARAMETER
UNITS
CONT MAX1
ABSOLUTE MAX2
Drain to Source Voltage
Channel Temperature
Storage Temperature
RF Input Power
See Safe Operating Limits
°C
55
+175
85
V
mW
-65 to +150
+150
NOTES: 1. Exceeding any one of these limits in continuous operation may reduce the
mean-time-to-failure below the design goals.
2. Exceeding any one of these limits may cause permanent damage.
MwT-4
DUAL BIAS
50
Output
Microstrip
50
Input
Microstrip
Output Reference
Plane
Input Reference
Plane
7 Mils Long
19 Mils Long
2 Mils
MwT
2 Mils
All Bond
Wires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level of
Microstrip
Gold Ridge
10x 10x 5 Mils
(2 each)
FP4
MwT-4
OPTIONAL BONDING
50
Output
Microstrip
50
Input
Microstrip
Output Reference
Plane
Input Reference
Plane
7 Mils Long
19 Mils Long
2 Mils
MwT
2 Mils
All Bond
Wires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level of
Microstrip
Gold Ridge
10x 10x 5 For
Dual Bias, or
25pF Caps for
Single Bias
(2 each)
FP4
FREQUENCY
GHz
NF MIN
dB
GAMMA OPT
MAG ANGLE
Rn/50
1.00
2.00
4.00
6.00
8.00
12.00
16.00
18.00
20.00
0.38
0.4
0.64
0.86
1.07
1.47
1.83
2.0
2.16
0.95
0.9
0.76
0.64
0.54
0.42
0.4
0.42
0.46
4.5
15.5
31.4
48
66.1
107.1
148.7
166.4
-178.5
0.94
0.83
0.53
0.43
0.38
0.32
0.29
0.28
0.26
TYPICAL NOISE PARAMETERS
MwT-4LN Chip: VDS= 3.0V IDS= 10mA
NOISE FIGURE AND
ASSOCIATED GAIN VS. FREQUENCY
2.0
MAXIMUM RATINGS AT Ta = 25
°°°°°C
1.5
1.0
0.5
12
4
6
8
12
20
20.0
15.0
10.0
5.0
0.0
Associated
Gain
(dB)
NFopt
(dB)
IDSS
(mA)
BIN#
1
2
3
18-
21
21-
24
24-
27
45
6
27-
30
30-
33
33-
36
78
9
36-
39
39-
42
42-
45
10
11
12
45-
48
48-
51
51-
54
13
14
15
54-
57
57-
60
60-
63
16
63-
66
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required.
BIN SELECTION
Frequency (GHz)
3
BIN ACCURACY STATEMENT
80.0
100.0
相关PDF资料
PDF描述
MWT-473 K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
MWT-471 K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
MWT-5SG K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MOSFET
MWT-5GG K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MOSFET
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