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参数资料
| 型号： | MWT-5 |
| 厂商： | MICROWAVE TECHNOLOGY INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | K BAND, GaAs, RF POWER, MESFET |
| 封装： | DIE-6 |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 代理商： | MWT-5 |
MwT-5
26 GHz High Gain, Dual Gate
GaAs FET
MwT-5
26 GHz High Gain, Dual Gate
GaAs FET
10.5 dB GAIN IN A 6-18 GHz BALANCED CIRCUIT
+14 dBm P1dB IN A 6-18 GHz BALANCED CIRCUIT
0.3 MICRON REFRACTORY METAL/GOLD GATE
HIGH POWER ADDED EFFICIENCY
DIAMOND-LIKE CARBON (DLC) PASSIVATION
2 x 300 MICRON GATE WIDTH
SYMBOL
PARAMETERS AND CONDITIONS
FREQ
UNITS
MIN
TYP
P1dB
SSG
GA
Output Power at 1 dB Compression
VDS= 6.0 V IDS=0.5xIDSS
Small Signal Gain
VDS= 6.0 V IDS=0.5xIDSS
Gain@Opt. NF
VDS= 6.0V IDS= 30 mA
6-18 Bal.
12 GHz
dBm
dB
10.0
18.0
10.5
11
RF SPECIFICATIONS AT Ta = 25
°°°°°C
12 GHz
DESCRIPTION
The MwT-5 is a dual gate GaAs MESFET device whose nominal quarter-micron gate length and 300 micron gate width make it ideally
suited to applications requiring high-gain in the 500 MHz to 26 GHz frequency range. The straigth gate geometry of the MwT-5 makes it
equally effective for either wideband (e.g. 2 to 26 GHz) or narrow-band applications. The chip is produced using MwT’s reliable metal
system and devices from each wafer are screened to insure reliability. All chips are passivated using MwT’s patented “Diamond-Like
Carbon” process for increased durability, Designers can use MwT’s unique BIN selection feature to choose devices from narrow Idss
ranges, insuring consistent circuit operation.
50
45
75
406
70
45
241
CHIP THICKNESS = 125
DC SPECIFICATIONS AT Ta = 25
°°°°°C
SYMBOL
PARAM. & CONDITIONS
UNITS
MIN
TYP
MAX
IDSS
Gm
Vp
BVGSO
BVGDO
Saturated Drain Current
Vds= 4.0 V VG1S=VG2S=0.0 V
Transconductance
Vds= 2.0 V VG2S=0.0 V
Pinch-off Voltage
Vds= 3.0 V VG2S=0V IDS=0mA
Gate-to-Source Breakdown Volt.
Igs= -0.4 mA
Gate-to-Drain Breakdown Volt.
Igd= -0.4 mA
mA
30
-2.0
110
mS
23
40
-4.5
V
°C/W
-5.0
-7.0
-8.0
-10.0
150
Lg1
Rds1
Cgd2
Cgd1
GATE 1
DRAIN
Cgs1
Cpg1
Rs2
Cds2
Cpd2
Ri1
Rs1
Ls1
gm1
tau1
SOURCE1
DEVICE EQUIVALENT CIRCUIT MODEL
Gate Bond Wire Inductance
Gate Pad Capacitance
Gate-Source Capacitance
Channel Resistance
Gate-Drain Capacitance
Transconductance
Transit Time
Lg
Cpg
Cgs
Ri
Cgd
gm
tau
0.173
nH
0.01
pF
0.159
pF
4.37
0.105
pF
44.0
mS
2.0
psec
Source Resistance
Source Inductance
Drain-Source Resistance
Drain Pad Capacitance
VALUE
PARAMETER (1)
Rs
Ls
Rds
Cpd
0.7
0.04
nH
100
0.01
pF
Rth
Thermal
Resistance
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
DC SPECIFICATIONS AT Ta = 25
°°°°°C
RF SPECIFICATIONS AT Ta = 25
°°°°°C
FEATURES
NOTE:
For Package information, please see supplimentary application note from our website at
www.mwtinc.com. When placing order or inquiring, please specify BIN range, wafer no., if
known, and screening level required.
ORDERING INFORMATION
Chip
MwT-5
All Dimensions in Microns
MwT-5 Chip
*Overall Rth depends on case mounting.
DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM
IDSS
Recommended IDSS Range
for Optimum P1dB
mA
55-
90
75
15.0
50
NF Opt Optimum Noise Figure
VDS= 6.0 V IDS=30 mA
dB
6.0
6-18 Bal.
12 GHz
6-18 Bal.
12 GHz
18.0
15.0
12.0
13.0
3.5
Gate Bond Wire Inductance
Gate-Source Capacitance
Channel Resistance
Gate-Drain Capacitance
Transconductance
Transit Time
Lg
Cgs
Ri
Cgd
gm
tau
0.12
nH
0.166
pF
5.7
0.056
pF
52.0
mS
2.0
psec
VALUE
PARAMETER (2)
Source Resistance
Drain-Source Resistance
Drain-Source Capacitance
Drain Resistance
Drain Bond Wire Inductance
Drain Pad Capacitance
Rs
Rds
Cds
Rds
Ld
pF
3.0
205
0.01
pF
4.3
0.253
nH
0.01
pF
Cds1
Rd2
Ld2
Rds2
gm2
tau2
Ri2
Lg2
Cgs2
GATE 2
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