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参数资料
| 型号： | MWT-H16-12 |
| 厂商： | MICROWAVE TECHNOLOGY INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | DIE-15 |
| 文件页数： | 1/2页 |
| 文件大小： | 133K |
| 代理商： | MWT-H16-12 |
DESCRIPTION
The MwT-H16 is an AlGaAs/InGaAs heterojunction PHEMT (Pseudomorphic-High-Electron-Mobility Transistor) device whose nominal
0.3 micron gate length and 900 micron gate width make it ideally suited to applications requiring high-gain and power in the 500 MHz to
28 GHz frequency range with power outputs ranging from 500-700 milli-watts. The device is equally effective for either wideband (e.g. 6-
18 GHz) or narrow-band applications. The chip is produced using MwT’s reliable metal system and all devices are screened to insure
reliability. All chips are passivated using MwT’s patented “Diamond-Like Carbon” process for increased durability.
50
52
1067
35
75
72
241
CHIP THICKNESS = 125 MICRONS
Lg
Rg
Rd
Ld
Cgd
GATE
DRAIN
Cgs
Cpg
Rds
Cds
Cpd
Ri
Rs
Ls
gm
tau
SOURCE
MwT-H16
AlGaAs/InGaAs PHEMT
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
ORDERING INFORMATION
Chip
MwT-H16
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening
level required.
28 dBm POWER OUTPUT AT 12 GHz
11 dB GAIN AT 12 GHz
0.3 MICRON REFRACTORY METAL/GOLD GATE
900 MICRON GATE WIDTH
All Dimensions in Microns
FEATURES
MwT-H16
28 GHz High Power
AlGaAs/InGaAs PHEMT
SYMBOL
PARAMETERS AND CONDITIONS
FREQ
UNITS
MIN
TYP
P1dB
SSG
PAE
Output Power at 1 dB Compression
VDS= 6.0 V Idss= 0.8 IDS=190mA
Small Signal Gain
VDS= 5.0 V IDS=190mA
Power Added Efficiency
VDS= 6.0V IDS=190mA
12 GHz
dBm
dB
%
27.0
10.0
28.0
11.0
50
RF SPECIFICATIONS AT Ta = 25
°°°°°C
Idss
Recommended IDSS Range
for Optimum P1dB
mA
102-
210
DC SPECIFICATIONS AT Ta = 25
°°°°°C
SYMBOL
PARAM. & CONDITIONS
UNITS
MIN
TYP
MAX
IDSS
Gm
Vp
BVGSO
BVGDO
Saturated Drain Current
Vds= 4.0 V VGS= 0.0 V
Transconductance
Vds= 2.0 V VGS= 0.0 V
Pinch-off Voltage
Vds= 3.0 V IDS= 6.0 mA
Gate-to-Source Breakdown Volt.
Igs= -1.5 mA
Gate-to-Drain Breakdown Volt.
Igd= -1.5 mA
mA
120
-2.0
282
mS
135
220
-5.0
V
°C/W
-6.0
-8.0
-12.0
55
Rth
Thermal
Resistance
40
DC SPECIFICATIONS AT Ta = 25
°°°°°C
RF SPECIFICATIONS AT Ta = 25
°°°°°C
MwT-H16 Chip
PMax
Output Power at Max Efficiency
Compression Point = 1.5 dB
VDS= 6.0 V IDS= 190mA
12 GHz
dBm
28.0
29.0
DEVICE EQUIVALENT CIRCUIT MODEL
Gate Bond Wire Inductance
Gate Pad Capacitance
Gate Resistance
Gate-Source Capacitance
Channel Resistance
Gate-Drain Capacitance
Transconductance
Transit Time
Lg
Cpg
Rg
Cgs
Ri
Cgd
gm
tau
0.05
nH
0.50
pF
0.30
1.40
pF
1.0
0.14
pF
280.0
mS
1.9
psec
Source Resistance
Source Inductance
Drain-Source Resistance
Drain-Source Capacitance
Drain Resistance
Drain Pad Capacitance
Drain Inductance
VALUE
PARAMETER
Rs
Ls
Rds
Cds
Rd
Cpd
Ld
0.60
0.04
nH
120.0
0.2
pF
1.0
0.20
pF
0.09
nH
ORDERING INFORMATION
DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM
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