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参数资料
| 型号： | MWT-H770-7 |
| 厂商： | MICROWAVE TECHNOLOGY INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 文件页数： | 1/2页 |
| 文件大小： | 130K |
| 代理商： | MWT-H770-7 |
MwT-H7
AlGaAs/InGaAs PHEMT
DESCRIPTION
The MwT-H7 is an AlGaAs/InGaAs heterojunction PHEMT (Pseudomorphic-High-Electron-Mobility Transistor) device whose nominal 0.3
micron gate length and 250 micron gate width make it ideally suited to applications requiring high-gain and medium power in the 500
MHz to 28 GHz frequency range. The device is equally effective for either wideband (e.g. 6-18 GHz) or narrow-band applications. The
chip is produced using MwT’s reliable metal system and all devices are screened to insure reliability. All chips are passivated using MwT’s
patented “Diamond-Like Carbon” process for increased durability.
50
356
50
100
50
70
241
CHIP THICKNESS = 125 MICRONS
Lg
Rg
Rd
Ld
Cgd
GATE
DRAIN
Cgs
Cpg
Rds
Cds
Cpd
Ri
Rs
Ls
gm
tau
SOURCE
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
ORDERING INFORMATION
21.5 dBm POWER OUTPUT AT 12 GHz
EXCELLENT FOR HIGH GAIN AND MEDIUM POWER
APPLICATIONS
0.3 MICRON REFRACTORY METAL/GOLD GATE
250 MICRON GATE WIDTH
CHOICE OF CHIP AND TWO PACKAGE TYPES
All Dimensions in Microns
FEATURES
SYMBOL
PARAMETERS AND CONDITIONS
FREQ
UNITS
MIN
TYP
P1dB
SSG
NFopt
Output Power at 1 dB Compression
VDS= 5.0 V Idss= 50mA IDS=0.8
Small Signal Gain
VDS= 5.0 V Idss= 50mA IDS=0.8
Optimum Noise Figure
VDS= 3.0 V IDS= 10mA
12 GHz
dBm
dB
20.0
11.0
21.5
12.0
2.0
RF SPECIFICATIONS AT Ta = 25
°°°°°C
Idss
Recommended IDSS Range
for Optimum P1dB
mA
50-
86
DC SPECIFICATIONS AT Ta = 25
°°°°°C
SYMBOL
PARAM. & CONDITIONS
UNITS
MIN
TYP
MAX
IDSS
Gm
Vp
BVGSO
BVGDO
Saturated Drain Current
Vds= 3.0 V VGS= 0.0 V
Transconductance
Vds= 3.0 V VGS= 0.0 V
Pinch-off Voltage
Vds= 3.0 V IDS= 1.0 mA
Gate-to-Source Breakdown Volt.
Igs= -0.4mA, Igd= 0
Gate-to-Drain Breakdown Volt.
Igd= -0.4 mA, Igs= 0
mA
34
-1.5
106
mS
50
75
-5.0
V
°C/W
-5.0
-6.0
-8.0
180-
380
Rth
Thermal
Resistance MwT -H770, H773
DC SPECIFICATIONS AT Ta = 25
°°°°°C
RF SPECIFICATIONS AT Ta = 25
°°°°°C
MwT-H7 Chip
DEVICE EQUIVALENT CIRCUIT MODEL
Gate Bond Wire Inductance
Gate Pad Capacitance
Gate Resistance
Gate-Source Capacitance
Channel Resistance
Gate-Drain Capacitance
Transconductance
Transit Time
Lg
Cpg
Rg
Cgs
Ri
Cgd
gm
tau
0.089
nH
0.050
pF
0.20
0.4
pF
6.9
0.04
pF
85.0
mS
3.02
psec
Source Resistance
Source Inductance
Drain-Source Resistance
Drain-Source Capacitance
Drain Resistance
Drain Pad Capacitance
Drain Inductance
VALUE
PARAMETER
Rs
Ls
Rds
Cds
Rd
Cpd
Ld
2.6
0.025
nH
400.0
0.070
pF
3.67
0.027
pF
0.159
nH
ORDERING INFORMATION
DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM
MwT-H7
28 GHz Medium Power/ High Gain
AlGaAs/InGaAs PHEMT
GA
Gain at Optimum Noise Figure
VDS= 3.0 V IDS= 10mA
12 GHz
%
10.0
NOTE:
For Package information, please see the Fapp0002 note from our website at www.mwtinc.com.
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening
level required.
Chip
MwT-H7
Package 70
MwT-H770
Package 73
MwT-H773
相关PDF资料 |
PDF描述 |
|---|---|
| MWT-H773HP | KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MWT-H7HP | KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MWT-H770HP | KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MWT-H9 | K BAND, GaAs, RF POWER, HEMFET |
| MWT-H971 | K BAND, GaAs, RF POWER, HEMFET |
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