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参数资料
| 型号： | MWT-PH11 |
| 厂商： | MICROWAVE TECHNOLOGY INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 文件页数： | 2/2页 |
| 文件大小： | 50K |
| 代理商： | MWT-PH11 |
MwT-PH11
High Power AlGaAs/InGaAs PHEMT
Preliminary Data Sheet
June 2006
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2006
DC Specifications:
at Ta= 25
°C
SYMBOL
PARAMETERS & CONDITIONS
UNITS
MIN
TYP
MAX
IDSS
Saturated Drain Current
Vds=3.0 V Vgs=0.0 V
mA
400
880
Gm
Transconductance
Vds=2.0 V Vgs=0.0 V
mS
450
800
Vp
Pinch-off Voltage
Vds=3.0 V Ids=16 mA
V
-1.2
-2.5
BVGSO
Gate-to-Source Breakdown Voltage
Igs= -2.4 mA
V
-6.0
-12.0
BVGDO
Gate-to-Drain Breakdown Voltage
Igd= -2.4 mA
V
-10.0
-13.0
Rth
Chip Thermal Resistance
°C /W
24
MAXIMUM RATINGS AT Ta = 25
°C
Symbol
Parameter
Units
Cont
Max1
Absolute
Max2
VDS
Drain to Source Volt.
V
7.5
8.0
Tch
Channel Temperature
°C
+150
+175
Tst
Storage Temperature
°C
-65 to+160
+180
Pin
RF Input Power
mW
480
720
Pt
Total Power Dissipation
mW
5400
6600
Notes:
1. Exceeding any one of these limits in continuous operation may reduce the mean-time- to-failure below the design goal.
2. Exceeding any one of these limits may cause permanent damage.
ORDERING INFORMATION:
When placing order or inquiring, please specify BIN range, wafer number, if known, and visual screening level required. For details of BIN Selection and
Safe Handling Procedure please see supplementary information in available PDF on our website www.mwtinc.com.
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