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参数资料
| 型号： | MWT-PH15 |
| 厂商： | MICROWAVE TECHNOLOGY INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封装： | 0.775 X 0.241 MM, 0.100 MM HEIGHT, DIE-11 |
| 文件页数： | 2/3页 |
| 文件大小： | 99K |
| 代理商： | MWT-PH15 |
MwT-PH15
28 GHz Medium Power AlGaAs/InGaAs PHEMT
June 2006
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2006
DC Specifications:
at Ta= 25
°C
SYMBOL
PARAMETERS & CONDITIONS
UNITS
MIN
TYP
MAX
IDSS
Saturated Drain Current
Vds=4.0 V Vgs=0.0 V
mA
120
240
Gm
Transconductance
Vds=2.5 V Vgs=0.0 V
mS
130
200
Vp
Pinch-off Voltage
Vds=3.0 V Ids=2.0 mA
V
-1.2
-2.5
BVGSO
Gate-to-Source Breakdown Voltage
Igs= -0.7 mA
V
-6.0
-10.0
BVGDO
Gate-to-Drain Breakdown Voltage
Igd= -0.7 mA
V
-10.0
-13.0
Rth
Chip Thermal Resistance
C/W
65*
* Overall Rth depends on case mounting
DEVICE EQUIVALENT CIRCUIT
PARAMETER
VALUE
Source Resistance
Rs
0.10
ohm
Source Inductance
Ls
0.03
nH
Drain-Source Resistance
Rds
200
ohm
Drain-Source Capacitance
Cds
0.12
pF
Drain Resistance
Rd
0.84
ohm
Drain Pad Capacitance
Cpd
0.05
pF
Drain Inductance
Ld
0.10
nH
Gate Bond Wire Inductance
Lg
0.07
nH
Gate Pad Capacitance
Cpg
0.20
pF
Gate Resistance
Rg
0.10
ohm
Gate-Source Capacitance
Cgs
1.30
pF
Channel Resistance
Ri
2.30
ohm
Gate-Drain Capacitance
Cgd
0.07
pF
Transconductance
gm
200
mS
Transit Time
tau
2.60
psec
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