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参数资料
| 型号： | MWT-PH16 |
| 厂商： | MICROWAVE TECHNOLOGY INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | DIE-15 |
| 文件页数： | 3/3页 |
| 文件大小： | 518K |
| 代理商： | MWT-PH16 |
MwT- PH16
28 GHz Medium Power AlGaAs/InGaAs PHEMT
June 2004
MwT-PH16
DUAL BIAS
MwT-PH16
SELF BIAS
MAXIMUM RATINGS AT Ta = 25
°C
Symbol
Parameter
Units
Cont
Max1
Absolute
Max2
VDS
Drain to Source Volt.
V
7.5
8.0
Tch
Channel Temperature
°C
+150
+175
Tst
Storage Temperature
°C
-65 to+150
+175
Pin
RF Input Power
mW
240
360
Pt
Total Power Dissipation
mW
2700
3300
Notes:
1.Exceeding any one of these limits in continuous operation may reduce the mean-time- to-failure below the design goal.
2.Exceeding any one of these limits may cause permanent damage.
BIN SELECTION
BIN#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
IDSS
(mA)
150-
165
165-
180
180-
195
195-
210
210-
225
225-
240
240-
255
255-
270
270-
285
285-
300
300-
315
315-
330
330-
345
345-
360
BIN ACCURACY STATEMENT: Due to the effects of temperature, dc loading and probe tip varnishing, the IDSS from the “on wafer” probing of
any MwT device may differ After it has been attached to a proper heat sink and tested in an RF or DC circuit. Because of the aforementioned
effects, the IDSS distribution may deviate as much as +/- 1 bin within the range identified on the label of Each die shipping container, and +/- 2
bins within the selected range.
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required. For details of BIN Selection and Safe
Handling Procedure please see supplementary information in available PDF format by clicking here.
All Specifications subject to change without notice
4268 Solar Way, Fremont, CA 94538, USA; PHONE: 510-651-6700; FAX: 510-651-2208; Website: www.mwtinc.com; Email:info@mwtinc.com
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