参数资料
型号: MWT-PH773
厂商: MICROWAVE TECHNOLOGY INC
元件分类: 小信号晶体管
英文描述: KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封装: 73
文件页数: 3/3页
文件大小: 86K
代理商: MWT-PH773
MwT-PH7
28 GHz Medium Power AlGaAs/InGaAs PHEMT
June 2006
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2006
MwT-PH7
DUAL BIAS
MwT-PH7
SELF BIAS
MAXIMUM RATINGS AT Ta = 25
°C
Symbol
Parameter
Units
Cont
Max1
Absolute
Max2
VDS
Drain to Source Voltage
V
6.5
7.0
Tch
Channel Temperature
°C
+150
+175
Tst
Storage Temperature
°C
-65 to+150
+175
Pin
RF Input Power
mW
80
120
Pt
Total Power Dissipation
mW
800
1000
Notes:
1. Exceeding any one of these limits in continuous operation may reduce the mean-time- to-failure below the design goal.
2. Exceeding any one of these limits may cause permanent damage.
BIN SELECTION
BIN#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
IDSS
(mA)
50-
54
54-
58
58-
62
62-
66
66-
70
70-
74
74-
78
78-
82
82-
86
86-
90
90-
94
94-
98
98-
102
102-
106
106-
110
110-
114
114-
118
118-
122
BIN ACCURACY STATEMENT: Due to the effects of temperature, dc loading and probe tip varnishing, the IDSS from the “on wafer” probing of any MwT
device may differ After it has been attached to a proper heat sink and tested in an RF or DC circuit. Because of the aforementioned effects, the IDSS
distribution may deviate as much as +/- 1 bin within the range identified on the label of Each die shipping container, and +/- 2 bins within the selected range.
ORDERING INFORMATION:
When placing order or inquiring, please specify BIN range, wafer number, if known, and visual screening level required. For details of BIN Selection and
Safe Handling Procedure please see supplementary information in available PDF on our website www.mwtinc.com. For package information, please see
supplementary application note in PDF format by clicking located on our website.
Chip
MwT-PH7
Package 70
MwT-PH770
Package 73
MwT-PH773
相关PDF资料
PDF描述
MWT-S770SN KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
MWT-S773SN KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
MWT-S7SN KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
MX043JR 44 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
MX043GR 44 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
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