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参数资料
| 型号： | MX1EZ110D10E3 |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 110 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AL |
| 封装： | ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 162K |
| 代理商： | MX1EZ110D10E3 |
Silicon 1 Watt Zener Diode
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1EZ110D5 thru 1EZ200D5, e3
1EZ110
D5
–
1EZ200
D5,
e
3
ELECTRICAL CHARACTERISTICS @ 25oC
NOMINAL
ZENER
VOLTAGE
(Note 2)
MAXIMUM ZENER IMPEDANCE
(Note 3)
MAXIMUM
REVERSE
CURRENT
MAXIMUM
ZENER
CURRENT
@ 100C
TYPICAL
TEMP.
COEFF.
OF
ZENER
VOLTAGE
MAXIMUM
SURGE
CURRENT
(Note 4)
VZ @
IZT
ZZT @ IZT
ZZK @ IZK
IR
@ VR
IZM
αV(BR)
IZSM
MICROSEMI
PART
NUMBER
(Note 1 and 5)
Volts
mA
Ohms
mA
μA
Volts
mA
%/
oC
Amps
1EZ110D5
1EZ120D5
1EZ130D5
110
120
130
2.3
2.0
1.9
570
710
910
5200
5800
6500
0.25
0.5
83.6
91.2
98.8
8.3
8.0
6.9
+0.095
0.15
0.14
0.13
1EZ140D5
1EZ150D5
1EZ160D5
140
150
160
1.8
1.7
1.6
1100
1300
1400
7000
7500
8000
0.25
0.5
106.4
114
121.6
6.5
5.7
5.4
+0.095
0.12
0.11
1EZ170D5
1EZ180D5
1EZ190D5
1EZ200D5
170
180
190
200
1.5
1.4
1.3
1.2
1450
1500
1700
1900
8500
9000
9500
10000
0.25
0.5
130.4
136.8
144.8
152
5.2
4.9
4.7
4.6
+0.095
+0.100
0.10
NOTES:
1.
Suffix 5 indicates =/-5% tolerance. Suffix 10 indicates +/-10%, no suffix indicates +/-20%. Also Suffix 1 indicates +/-1% and suffix 2
indicates +/-2% on VZ tolerance.
2.
Voltage measurements to be performed 90 seconds after application of dc current at
TA 25
oC (+8, -2oC). Test currents (I
ZT) have been
selected so that power dissipation is 0.25 watts at nominal voltages. This results in a typical junction temperature rise of 10
oC.
3.
The Zener impedance is derived from the 60 Hz ac voltage that results when an ac current having an rms value equal to 10% of the dc
Zener current (IZT or IZK) is superimposed on IZT or IZK.
4.
Maximum Surge Current IZSM is a non recurrent maximum peak reverse surge with a pulse width of 8.3 ms.
5.
Glass devices may be ordered by replacing E in the series type number with G.
Example: 1GZ110D5
1EZ
110
D
5
1 WATT
MOLDED
ZENER
DIODE
DEVICE
% TOLERANCE
NOMINAL
ZENER
VOLTAGE
Microsemi
Scottsdale Division
Page 2
Copyright
2006
6-20-2006 REV C
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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| MX1H5615 | 功能描述:DIODE 1A 200V AXIAL RoHS:否 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879 |
| MX1J100K | 制造商:Ohmite Mfg Co 功能描述: |
| MX1J10K | 制造商:Ohmite Mfg Co 功能描述: |
| MX1J10R | 制造商:Ohmite Mfg Co 功能描述: |
| MX1J10RE-R52 | 制造商:OHMITE 制造商全称:Ohmite Mfg. Co. 功能描述:Metal Oxide Resistors 5% Tolerance RoHS Compliant |
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